專任教師
 
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李義明
李義明
教授
組　　　別：
電波組
辦　公　室：
ES812
電　　　話：
03-5712121ext52974
信　　　箱：
ymli@nycu.edu.tw
實驗室名稱：
平行與科學計算實驗室
實驗室位置：
ES622
實驗室網站：
http://www.ymlab.org/
研究　主題：
天線設計, 電磁理論, 射頻電路設計
  • 個人簡歷
    李義明博士是國立交通大學電機工程學系專任教授，講授『電子學』、『固態電子學』、『數值分析』、『數值半導體元件模式』、『電腦輔助電路設計與分析』以及『最佳化理論與應用』等課程。李教授對於跨領域電機資訊、生物感測、能源轉換實務問題的數學建模，數值模擬與最佳化分析之研究特別專注。他長期致力於半導體與光電產業的前瞻技術開發以及設計自動化之產學合作，其研究論文散見於國際學術期刊、國際會議論文集以及專書章節。他目前擔任許多國際學術期刊的主編、副編輯、客座編輯、審查委員等，同時參與國際學術會議活動，擔任主席、執行委員及議程委員等職務。他是美國電腦學會(ACM)、美國物理學會(APS)、國際電機電子工程師學會(IEEE)、以及工業和應用數學學會(SIAM)積極會員。李教授列名於世界名人錄，是我國斐陶斐(Phi Tau Phi)以及美國Sigma Xi榮譽學會會員，他於2002年與2006年分別獲得潘文淵文教基金會考察研究獎以及中國電機工程學會優秀青年電機工程師獎。他指導的學生其論文於2007年獲得中華民國科技管理學會年會暨論文研討會最佳論文獎；於2007年獲得科林論文獎；於2008-2010連續三年獲得國際電子元件與材料研討會傑出論文獎；於2009年獲得IEEE國際會議ASQED最佳論文獎；於2010年獲得IEEE國際會議ICSE最佳論文獎；於2010年獲得茂迪太陽能應用設計獎。

  • 經歷與榮譽

    校外榮譽事項  

    o 指導學生張翰東、沈承翰、陳昱宇、陳頡陽、鍾聖川同學榮獲2012電子工程技術研討會之傑出論文奬優等    
    o 指導碩士班陳昱宇同學榮獲 2012國際奈米科技研討會學生論文競賽 口頭報告論文獎   
    o 指導學生鄭惠文榮獲2011 IEEE ASQED 大會 最佳論文獎 
    o 指導博士班鄭惠文同學榮獲2010國際工程與科學計算方法會議年輕科學家獎    
    o 指導學生蘇信文、邱勇岳榮獲高雄海洋科技大學2011微電子技術發展與應用研討會 發表論文    
    o 指導學生張如薇榮獲99學年度大專學生參與專題研究計畫研究創作獎    
    o 指導學生電機系碩士班蘇信文, 電信所博士班鄭惠文榮獲International Electron Devices and Materials Symposium 2011 (IEDMS 2011) IEDMS傑出論文獎    
    o 指導的碩士班李國輔、陳英傑、鄭惠文、與邱映如同學榮獲2010 IEEE International Conference on Semiconductor Electronics最佳學生論文獎    
    o 指導博士班李富海、鄭惠文同學榮獲2010國際電子元件暨材料研討會(IEDMS)傑出論文獎    
    o 指導大學部余家輝、鄭惠文同學榮獲2010年茂迪盃太陽能光電應用設計創意競賽榮獲「最佳設計獎第三名」    
    o 指導管理科學所碩士班陳永昌同學榮獲 2009年中華民國科技管理學會科技管理博碩士論文獎佳作    
    o 指導碩士班曾毓翔、鄭惠文、余家輝同學榮獲大學院校奈米元件 電腦輔助模擬與設計軟體製作競賽特優獎    
    o 指導碩士班羅翊修、黃至鴻、韓銘鴻同學榮獲大學院校奈米元件電腦輔助模擬與設計軟體製作競賽特優獎    
    o 指導碩士班李典燁、黃至鴻同學榮獲 IEEE 2009 Asia Symposium on Quality Electronic Design最佳論文獎    
    o 指導博士班黃至鴻、韓銘鴻同學榮獲2009國際電子元件暨材料研討會(IEDMS)傑出論文獎    
    o 指導曾毓翔同學獲台積電傑出學生研究獎大專組佳作    
    o 指導黃至鴻同學獲台積電傑出學生研究獎銅牌獎    
    o 指導黃至鴻、葉大慶與李典燁同學獲思源EDA 頂尖國際會議論文(ICCAD)獎勵    
    o 指導鄭惠文、黃至鴻與謝昌融同學獲國際電子材料及元件會議(IEDMS)傑出論文獎    
    o 指導杜英儀同學獲中華民國科技管學會年會暨論文研討會議最佳論文獎    
    o 指導羅翔煜同學獲科林論文獎優等獎    
    o 優秀青年電機工程師獎    
    o 潘文淵文教基金會研究考察獎    
    o 斐陶斐(Phi Tau Phi)學術榮譽學會榮譽會員(1996, 2001兩度獲選)    

    校內榮譽事項  

    o 2011年傑出人士    
    o 第五屆產學技術交流卓越貢獻獎 銀翼獎    
    o 2010年傑出人士    
    o 電機院傑出教學獎    
    o 2009年傑出人士    
    o 2008年傑出人士    
    o 2008年研究成果獎勵    
    o 2007年傑出人士     
    o 2006年傑出人士    
     

  • 研究主題
    • 半導體元件模式與模擬
    • 電路模擬與設計最佳化
    • 顯示、生醫與能源電子

  • 期刊論文
    • Yi-Chia Tsai, Ming-Yi Lee, Yiming Li*, and Seiji Samukawa, “Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice,” IEEE Transactions on Electron Devices, Vol. 64, No. 11, Nov. 2017, pp. 4547-4553.
    • Yi-Chia Tsai, Yiming Li*, and Seiji Samukawa, “Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide,” Nanotechnology, Vol. 28, No. 48, Nov. 2017, 485401 (9pp).
    • Mohammad Maksudur Rahman, Yi-Chia Tsai, Ming-Yi Lee, Akio Higo, Yiming Li*, Yusuke Hoshi, Noritaka Usami, Seiji Samukawa, "Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells," IEEE Transactions on Electron Devices, Vol. 64, No. 7, July 2017, pp. 2886-2892.
    • En-Tzu Lee, Hui-Wen Cheng, Jung-Yen Yang, and Yiming Li*, "Shape Effect of Surface-Enhanced Raman Scattering- Active-Substrate-Based Nanoparticles on Local Electric Field for Biochemical Sensing Application," Journal of Nanoscience and Nanotechnology, Vol. 17, No. 2, Feb. 2017, pp. 871-877.
    • Wataru Mizubayashi, Shuichi Noda, Yuki Ishikawa, Takashi Nishi, Akio Kikuchi, Hiroyuki Ota, Ping-Hsun Su, Yiming Li, Seiji Samukawa, and Kazuhiko Endo, "Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors," Applied Physics Express, Vol. 10, No. 2, Jan. 2017, 026501 (4pp).
    • Cheng-Yi Chang, Fu-Ming Pan, Jian-Siang Lin, Tung-Yuan Yu, Yiming Li, and Chieh-Yang Chen, "Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression," Journal of Applied Physics, Vol. 120, No. 23, Dec. 2016, 234501 (8pp).
    • Chien-Hsueh Chiang and Yiming Li*, “A Novel Driving Method for High-Performance Amorphous Silicon Gate Driver Circuits in Flat Panel Display Industry,” IEEE/OSA Journal of Display Technology., Vol. 12, No. 10, Oct. 2016, pp. 1051-1056.
    • Ping-Hsun Su and Yiming Li*, “A Systematic Approach to Correlation Analysis of In-line Process Parameters for Process Variation Effect on Electrical Characteristic of 16-nm HKMG Bulk FinFET Devices,” IEEE Transactions on Semiconductor Manufacturing, Vol. 29, No. 3, Aug. 2016, pp. 209-216.
    • Ping-Hsun Su and Yiming Li*, “Process-Dependence Analysis for Characteristic Improvement of Ring Oscillator Using 16-nm Bulk FinFET Devices,” IEEE Transactions on Electron Devices, Vol. 63, No. 8, Aug. 2016, pp. 3058-3063.
    • Niraj Man Shrestha, Yiming Li, and Edward Yi Chang, “Step Buffer Layer of Al0.25Ga0.75N / Al0.08Ga0.92N on P-AlInN Gate Normally-off High Electron Mobility Transistors,” Semiconductor Science and Technology, Vol. 31, No. 7, July 2016, 075006 (8pp).
    • Yi-Hsuan Hung, Sheng-Chin Hung, Chien-Hsueh Chiang, and Yiming Li*, “Optimal Design of a Novel Amorphous Silicon Gate Driver Circuit by Using a TFT-Circuit-Simulation-Based Multi-objective Evolutionary Algorithm,” Journal of Information Display, Vol. 17, No. 2, June 2016, pp. 51-58.
    • Yi-Chia Tsai, Ming-Yi Lee, Yiming Li*, Mohammad Maksudur Rahman, and Seiji Samukawa, “Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications,” IEEE Electron Device Letters, Vol. 37, No. 6, June 2016, pp. 758-761.
    • Ping-Hsun Su and Yiming Li*, “Exploration of Inter-Die Bulk FinFET Process Variation for Reduction of Device Variability,” Journal of Nanoscience and Nanotechnology, Vol. 16, No. 6, June 2016, pp. 6124-6130.
    • Mohammad Maksudur Rahman, Ming-Yi Lee, Yi-Chia Tsai, Akio Higo, Halubai Sekhar, Makoto Igarashi, Mohd Erman Syazwan, Yusuke Hoshi, Kentarou Sawano, Noritaka Usami, Yiming Li*, and Seiji Samukawa, “Impact of Silicon Quantum Dot Super Lattice and Quantum Well Structure as Intermediate Layer on p-i-n Silicon Solar Cells,” Progress in Photovoltaics: Research and Applications, Vol. 24, No. 6, June 2016, pp. 774-780.
    • Fu-Ju Hou, Po-Jung Sung, Fu-Kuo Hsueh, Chien-Ting Wu, Yao-Jen Lee, Mao-Nang Chang, Yiming Li, and Tuo-Hung Hou, “32-nm Multigate Si-nTFET with Microwave-Annealed Abrupt Junction,” IEEE Transactions on Electron Devices, Vol. 63, No. 5, May 2016, pp. 1808-1813.
    • Yi-Chia Tsai, Ming-Yi Lee, Yiming Li*, and Seiji Samukawa, “Miniband Formulation in Ge/Si Quantum Dot Array,” Japanese Journal of Applied Physics, Vol. 55, No. 4, April 2016, 04EJ14 (4 pages).
    • Niraj Man Shrestha, Yiming Li*, and Edward Yi Chang, “Optimal Design of the Multiple-Apertures-GaN-Based Vertical HEMTs with SiO2 Current Blocking Layer,” Journal of Computational Electronics, Vol. 15, No. 1, Mar. 2016, pp. 154-162.
    • Chien-Hsueh Chiang and Yiming Li*, “Low Power and High Driving Capability of Amorphous-Silicon Gate Driver Circuit,” IEEE/OSA Journal of Display Technology, Vol. 12, No. 1, Jan. 2016, pp. 55-61.
    • Yiming Li*, “Optimal Geometry Aspect Ratio of Ellipse-Shaped-Surrounding-Gate Nanowire Field Effect Transistors,” Journal of Nanoscience and Nanotechnology, Vol. 16, No. 1, Jan. 2016, pp. 920-923.
    • Li-Wei Yang, Yi-Chia Tsai, Yiming Li, Aiko Higo, Akihiro Murayama, S. Samukawa, and O. Voskoboynikov, “Tuning of the electron g-factor in defect free GaAs nanodisks,” Physical Review B, Vol. 92, Dec. 2015, 245423 (9 pages).
    • Ming-Yi Lee, Yiming Li*, and Seiji Samukawa, “Miniband Calculation of Three-Dimensioanl Nanostructure Array for Solar Cell Applications,” IEEE Transactions on Electron Devices, Vol. 62, No. 11, Nov. 2015, pp. 3709-2714.
    • Chien-Hsueh Chiang and Yiming Li*, “Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications,” IEEE/OSA Journal of Display Technology, Vol. 11, No. 8, Aug. 2015, pp. 633-639.
    • Sheng-Chin Hung, Chien-Hsueh Chiang, and Yiming Li*, “Circuit-Simulation-Based Multi-objective Evolutionary Algorithm for Design Optimization of a-Si:H TFTs Gate Driver Circuits under Multi-Level Clock Driving,” IEEE/OSA Journal of Display Technology, Vol. 11, No. 8, Aug. 2015, pp. 640-645.
    • Niraj Man Shrestha, Yuen Yee Wang, Yiming Li* and Edward Yi Chang, “A Novel AlGaN/GaN Multiple Aperture Vertical High Electron Mobility Transistor with Silicon Oxide Current Blocking Layer,” Vacuum, Vol. 118, Aug. 2015, pp. 59-63.
    • Cheng-Hao Huang and Yiming Li*, “Simulation Study of 14-nm-Gate III-V Trigate Field Effect Transistor Devices with In1-xGaxAs Channel Capping Layer,” AIP Advances, Vol. 5, June 201 067107 (14 pages).
    • Yiming Li* and Ying-Chieh Chen, "Optimal Channel Doping Profile of Two-Dimensional Metal-Oxide-Semiconductor Field-Effect Transistors via Geometric Programming," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, May 2015, pp. 178-200.
    • Ping-Hsun Su and Yiming Li*, "Source/Drain Series Resistance Extraction in HKMG Multi-Fin Bulk FinFET Devices," IEEE Transactions on Semiconductor Manufacturing, Vol. 28, No. 2, May 2015, pp. 193-199.
    • Ping-Hsun Su and Yiming Li*, "Determination of Source-and-Drain Series Resistance of 16-nm-Gate FinFET Devices," IEEE Transactions on Electron Devices, Vol. 62, No. 5, May 2015, pp. 1663-1667.
    • Yiming Li* and Chieh-Yang Chen, "Capacitance Characteristic Optimization of Germanium MOSFETs with Aluminum Oxide by using Semiconductor-Device-Simulation-Based Multi-Objective Evolutionary Algorithm Method," Materials and Manufacturing Processes, Vol. 30, No. 4, April 2015, pp. 520-528.
    • Wen-Tsung Huang and Yiming Li*, "Electrical Characteristic Fluctuation of 16-nm-Gate Trapezoidal Bulk FinFET Devices with Fixed Top-Fin Width Induced by Random Discrete Dopants," Nanoscale Research Letters, Vol. 10, No. 3, Mar. 2015, 116.
    • Yiming Li*, Wen-Tsung Huang, Chieh-Yang Chen, and Yu-Yu Chen, "Upper/lower-side random dopant fluctuation on 16-nm-gate HKMG bulk FinFET," International Journal of Nanotechnology., Vol. 12, No. 1-2, Jan. 2015, pp. 126-138.
    • Chieh-Yang Chen and Yiming Li*, "Device Simulation and Multi-objective Genetic Algorithm-Based Optimization of Germanium metal-Oxide-Semiconductor Structure," Computer Methods in Materials Science, Vol. 15, No. 1, Jan. 2015, pp. 258-263.
    • Sheng-Chia Hsu and Yiming Li*, "Electrical Characteristic Fluctuation of 16-nm-Gate High-K/Metal Gate Bulk FinFET Devices in the Presence of Random Interface Traps," Nanoscale Research Letters, Vol. 9, No. 11, Nov. 2014, 633.
    • Yiming Li*, Chieh-Yang Chen, and Yu-Yu Cheng, "Random-Work-Function-Induced Characteristic Fluctuation in 16-nm-Gate Bulk and SOI FinFETs," International Journal of Nanotechnology, Vol. 11, No. 12, Oct. 2014, pp. 1029-1038.
    • Niraj Man Shrestha, Yiming Li* and Edward Yi Chang, "Simulation Study on Electrical Characteristic of AlGaN/GaN High Electron Mobility Transistors with AlN Spacer Layer," Japanese Journal of Applied Physics, Vol. 53, No. 4, April 2014, 04EF08 (7 pages).
    • Chien-Hsueh Chiang and Yiming Li*, "High-reliability and low-noise amorphous-silicon gate with a novel clock-driving methodology," Journal of Information Display, Vol. 15, No. 1, Jan. 2014, pp. 5-11. 
    • Yiming Li*, Hsin-Wen Su, Yu-Yu Chen, Sheng-Chia Hsu, and Wen-Tsung Huang, "The intrinsic parameter fluctuation on high-κ/metal gate bulk FinFET devices," Microelectronic Engineering, Vol. 109, Sept. 2013, pp. 302-305.
    • Chien-Hung Chen, Yiming Li*, Chieh-Yang Chen, Yu-Yu Chen, Sheng-Chia Hsu, Wen-Tsung Huang, and Sheng-Yuan Chu, "Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices," Microelectronic Engineering, Vol. 109, Sept. 2013, pp. 357-359.
    • Weiguo Hu, Mohammad Maksudur Rahman, Ming-Yi Lee, Yiming Li*, and Seiji Samukawa, "Simulation study of type-II Ge/Si quantum dot for solar cell applications," Journal of Applied Physics, Vol. 114, No. 12. Sept. 2013, 124509.
    • Yiming Li*, Yu-Yu Chen, Chieh-Yang Chen, Cheng-Han Shen, Hui-Wen Cheng, I-Hsiu Lo, and Chun-Nan Chen, "Device Simulation–Based Multiobjective Evolutionary Algorithm for Process Optimization of Semiconductor Solar Cells," Materials and Manufacturing Processes, Vol. 28, No. 7, July 2013, pp. 761-767.
    • Weiguo Hu, Makoto Igarashi, Ming-Yi Lee, Yiming Li*, and Seiji Samukawa, "Realistic quantum design of silicon quantum dot intermediate band solar cells," Nanotechnology, Vol. 24, No. 26, July 2013, 265401.
    • Yiming Li*, “Computer Simulation of Electron Energy State Spin-Splitting in Nanoscale InAs/GaAs Semiconductor Quantum Rings,” Mathematical and Computer Modelling, Vol. 58, No. 1–2, July 2013, pp. 300-305.
    • Yiming Li* and Ying-Chieh Chen, “Geometric Programming Approach to Doping Profile Design Optimization of Metal-Oxide-Semiconductor Devices,” Mathematical and Computer Modelling, , Vol. 58, No. 1–2, July 2013, pp. 344-354.
    • W. Hu, M.F. Budiman, M. Igarashi, M.-Y. Lee, Yiming Li, S. Samukawa, “Modeling miniband for realistic silicon nanocrystal array,” Mathematical and Computer Modelling, Vol. 58, No. 1–2, July 2013, pp. 306-311.
    • Chun-Nan Chen, Sheng-Hsiung Chang, Wei-Long Su, Jen-Yi Jen, Yiming Li, “Multiband treatment of quantum transport in anisotropic semiconductor: Non-equilibrium Green’s function,” Mathematical and Computer Modelling, Vol. 58, No. 1–2, July 2013, pp. 282–287.
    • Yiming Li*, Chien-Hshueh Chiang, Yu-Yu Chen, and Chieh-Yang Chen, "Optimal power consumption design of the amorphous silicon thin-film transistor gate driver circuit for 10.1-in. display panel manufacturing," Journal of Information Display, Vol. 14, No. 1, March 2013, pp. 13-19.
    • Yiming Li* and Hui-Wen Cheng, “Statistical Device Simulation of Physical and Electrical Characteristic Fluctuations in 16-nm-Gate High-κ/Metal Gate MOSFETs in the Presence of Random Discrete Dopants and Random Interface Traps,” Solid-State Electronics. Vol. 77, Nov. 2012, pp. 12-19.  
    • Chun-Nan Chen, Sheng-Hsiung Chang, Wei-Long Su, Jen-Yi Jen, and Yiming Li, “Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor,” Semiconductors, Vol. 46, No. 9, Setp. 2012, pp. 1126-1134.     
    • Yiming Li*, Hui-Wen Cheng, and Chih-Hong Hwang, “Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain,” Journal of Nanoscience and Nanotechnology, Vol. 12, No. 6, June 2012, pp. 4485-4488.  
    • Yiming Li* and Hui-Wen Cheng, “Random Work Function Induced Threshold Voltage Fluctuation in Metal-Gate MOS Devices by Monte Carlo Simulation,” IEEE Transactions on Semiconductor Manufacturing, Vol. 25, No. 2, May 2012, pp. 266-271.  
    • Yiming Li* and Hui-Wen Cheng, “Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit,” Japanese Journal of Applied Physics, Vol. 51, No. 4, April 2012, 04DC08 (6 pages).    
    • Hui-Wen Cheng, Chih-Hong Hwang, Ko-An Chao, and Yiming Li*, “Effect of Flash Lamp Annealing and Laser Spike Annealing on Random Dopant Fluctuation of 15-nm Metal-Oxide-Semiconductor Devices,” Journal of Nanoscience and Nanotechnology, Vol. 12, No. 3, March 2012, pp. 2462-2466.    
    • Yiming Li*, Ming-Yi Lee, Hui-Wen Cheng, and Zheng-Liang Lu, “3D Simulation of Morphological Effect on Reflectance of Si3N4 Sub-Wavelength Structures for Silicon Solar Cells,” Nanoscale Research Letters, Vol. 7, March 2012, 196 (6 pages).    
    • Chun-Nan Chen, Sheng-Hsiung Chang, Wei-Long Su, Wan-Tsang Wang, Hsiu-Fen Kao, Jen-Yi Jen, and Yiming Li, “Application of Block Diagonal Technique to a Hamiltonian Matrix in Performing Spin-splitting Calculations for GaN Wurtzite Materials,” Journal of the Korean Physical Society, Vol. 60, No. 3, Feb. 2012, pp. 403-409.   
    • Chun-Nan Chen, Wei-Long Su, Wan-Tsang Wang, Jen-Yi Jen, and Yiming Li, “k.p Wurtzite Hamiltonian and Optical Matrix with Bulk Inversion Asymmetry,” Modern Physics Letters B, Vol. 26, No. 1, 2012, 1150002 (7 pages).       
    • Hui-Wen Cheng and Yiming Li*, “16-nm Multigate and Multifin MOSFET devices and SRAM Circuits,” International Journal of Electrical Engineering, Vol. 18, No. 6, Dec. 2011, pp. 291-297. 
    • Hsin-Wen Su, Hui-Wen Cheng, and Yiming Li*, “New Structure of Dual-Material Gate Approach to Suppress Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices,” International Journal of Electrical Engineering, Vol. 18, No. 6, Dec. 2011, pp. 277-283.
    • Bi-Huei Tsai and Yiming Li, “Modeling Competition in Global LCD TV Industry,” Applied Economics, Vol. 43, No. 22, Sept. 2011, pp. 2969-2981.
    • Chun-Nan Chen, Wei-Long Su, Meng-En Lee, Jen-Yi Jen, and Yiming Li, “k.p Zincblende Hamiltonian and Optical Matrix with Bulk Inversion Asymmetry,” Japanese Journal of Applied Physics, Vol. 50, No. 8, Aug 2011, 081202 (3 pages). 
    • Yiming Li*, Hui-Wen Cheng, and Yung-Yueh Chiu, “Interface Traps and Random Dopants Induced Characteristic Fluctuations in Emerging MOSFETs,” Microelectronic Engineering, Vol. 88, No. 7, July 2011, pp. 1269-1271.
    • Yiming Li*, Hui-Wen Cheng, Chun-Yen Yiu, and Hsin-Wen Su, “Nanosized Metal Grains Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-k / Metal Gate Bulk FinFET Devices,” Microelectronic Engineering, Vol. 88, No. 7, July 2011, pp. 1240-1242. 
    • Chun-Nan Chen, Wei-Long Su, Meng-En Lee, Jen-Yi Jen, and Yiming Li, “General Expressions for Ellipsoidal-Valley Quantum Transport in Arbitrary Growth Direction: Non-Equilibrium Green’s Function,” Japanese Journal of Applied Physics, Vol. 50, No. 6, June 2011, 060201 (3 pages).
    • Yiming Li*, Ko-Fu Lee, I-Hsiu Lo, Tony Chiang, and Kuen-Yu Huang, “Dynamic Characteristic Optimization of 14 a-Si:H TFTs Gate Driver Circuit Using Evolutionary Methodology for Display Panel Manufacturing,” IEEE/OSA Journal of Display Technology, Vol. 7, No. 5, May 2011, pp. 274-280. 
    • Yiming Li* and Yu-Hsiang Tseng, “Hybrid Differential Evolution and Particle Swarm Optimization Approach to Surface-Potential-Based Model Parameter Extraction for Nanoscale MOSFETs,” Materials and Manufacturing Processes, Vol. 26, No. 3, April 2011, pp. 388-397.
    • Yiming Li* and Ko-Fu Lee, Chun-Yen Yiu, Yung-Yueh Chiu, and Ru-Wei Chang, “Dual Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm MOSFEDevices,” Japanese Journal of Applied Physics, Vol. 50, No. 4, April 2011, 04DC07 (7 pages).
    • Yiming Li* and Hui-Wen Cheng, “Nanosized-Metal-Grain-Induced Characteristic Fluctuation in 16-nm-Gate Complementary Metal-Oxide-Semiconductor Devices and Digital Circuits,” Japanese Journal of Applied Physics, Vol. 50, No. 4, April 2011, 04DC22 (6 pages). 
    • Jung-Yen Yang, Hui-Wen Cheng, Yu Chen, Yiming Li*, Chi-Hung Lin and Kuang-Lieh Lu, “Hydrothermally Roughened Surface-Enhanced Raman Scattering-Active Substrates with Low Background Signals for Chemical Sensing Application,” Journal of Nanoscience and Nanotechnology, Vol. 11, No. 3, March 2011, pp. 2012-2017.
    • Jung-Yen Yang, Hui-Wen Cheng, Yu Chen, Yiming Li*, and Chi-Hung Lin, “Surface-Enhanced Raman Scattering Active Substrates - A novel hydrothermally roughened nanostructure for biological and chemical detections,” IEEE Nanotechnology Magazine, Vol. 5, No. 1, March 2011, pp. 12-16.
    • Hui-Wen Cheng and Yiming Li*, “Numerical Simulation of Field Distribution of SERS Active Substrates for Rhodamine 6G Detection,” Computer Methods in Materials Science, Vol. 11, No. 1, Jan. 2011, pp. 369-374.
    • Yiming Li*, Hui-Wen Cheng, I-Hsiu Lo, Chia-Hui Yu, and Zheng-Liang Lu, “Electrical Characteristic Optimization of Silicon Solar Cells Using Genetic Algorithm,” Computer Methods in Materials Science, Vol. 11, No. 1, Jan. 2011, pp. 23-27. 
    • Hui-Wen Cheng, Yiming Li*, and Jung-Yen Yang, “Investigation of Raman Enhancement in Hydrothermally Roughened SERS-Active Substrates,” Computer Physics Communications, Vol. 182, No. 1, Jan. 2011, pp. 260-262.
    • Yiming Li*, Hui-Wen Cheng, and Ming-Hung Han, “Quantum Hydrodynamic Simulation of Discrete-Dopant Fluctuated Physical Quantities in Nanoscale FinFET,” Computer Physics Communications, Vol. 182, No. 1, Jan. 2011, pp. 96-98.
    • Yiming Li*, Hui-Wen Cheng, and Ming-Hung Han, “Statistical Simulation of Static Noise Margin Variability in Static Random Access Memory” IEEE Transactions on Semiconductor Manufacturing, Vol. 23, No. 4, Nov. 2010, pp. 509-516. 
    • Huang-Ming Lee, Kartika Chandra Sahoo, Yiming Li, Jong-Ching Wu, and Edward Yi Chang, “Finite Element Analysis of Antireflective Silicon Nitride Sub-Wavelength Structures for Solar Cell Applications,” Thin Solid Films, Vol. 518, No. 24, Oct. 2010, pp. 7204-7208.  
    • Kartika Chandra Sahoo, Chien-I Kuo, Yiming Li*, and Edward Yi Chang, “Novel Metamorphic HEMTs with Highly Doped InGaAs Source/Drain Regions for High Frequency Applications,” IEEE Transactions on Electron Devices, Vo. 57, No. 10, Oct. 2010, pp. 2594-2598.
    • Kartika Chandra Sahoo, Yiming Li*, and Edward Yi Chang, “Shape Effect of Silicon Nitride Sub-wavelength Structure on Reflectance for Solar Cell Application,” IEEE Transactions on Electron Devices, Vo. 57, No. 10, Oct. 2010, pp. 2427-2433. 
    • Kartika Chandra Sahoo, Edward-Yi Chang, Yiming Li, Men-Ku Lin, and Jin-Hua Huang, “Fabrication and Configuration Development of Silicon Nitride Sub-wavelength Structures for Solar Cell Application,” Journal of Nanoscience and Nanotechnology, Vol. 10, No. 9, Sept. 2010, pp. 5692-5699. 
    • Kuo-Fu Lee, Yiming Li*, Tien-Yeh Li, Zhong-Cheng Su, and Chih-Hong Hwang, “Device and Circuit Level Suppression Techniques for Random-Dopant-Induced Static Noise Margin Fluctuation in 16-nm-Gate SRAM Cell,” Microelectronics Reliability, Vol. 50, No. 5, May 2010, pp. 647-651.
    • Chih-Hong Hwang, Yiming Li*, and Ming-Hung Han, “Statistical Variability in FinFET Devices with Intrinsic Parameter Fluctuations,” Microelectronics Reliability, Vol. 50, No. 5, May 2010, pp. 635-638.
    • Ming-Hung Han, Yiming Li*, and, Chih-Hong Hwang, “The Impact of High Frequency Characteristics Induced by Intrinsic Parameter Fluctuations in Nano-MOSFET Device and Circuit,” Microelectronics Reliability, Vol. 50, No. 5, May 2010, pp. 657-661.
    • Hui-Wen Cheng and Yiming Li*, “Optimization on Configuration of Surface Conduction Electron-Emitters,” Microelectronics Reliability, Vol. 50, No. 5, May 2010, pp. 699-703. 
    • Bi-Huei Tsai, Yiming Li, and Guan-Hua Lee, “Forecasting Global Adoption of Crystal Display Televisions with Modified Product Diffusion Model,” Computers & Industrial Engineering, Vol. 58, No. 4, May 2010, pp. 553-562. 
    • Yiming Li*, “Simulation-Based Evolutionary Method in Antenna Design Optimization,” Mathematical and Computer Modelling, Vol. 51, No. 7-8, April 2010, pp. 944-955.
    • Kuo-Fu Lee, Yiming Li*, and Chih-Hong Hwang, “Asymmetric Gate Capacitance and Dynamic Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants,” Semiconductor Science and Technology, Vol. 25, No. 4, April 2010, 045006. 
    • Ying-Chieh Chen and Yiming Li*, “Temperature-Aware Floorplanning via Geometric Programming,” Mathematical and Computer Modelling, Vol. 51, No. 7-8, April 2010, pp. 927-934. 
    • Ming-Hung Han, Yiming Li*, and Chih-Hong Hwang, “Discrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor with High Dielectric Constant Material,” Japanese Journal of Applied Physics, Vol. 49, No. 4, April 2010, 04DC02 (5 pages).
    • Hui-Wen Cheng and Yiming Li*, “Comparative Study of Multigate and Multifin Metal-Oxide-Semiconductor Field-Effect Transistor,” Japanese Journal of Applied Physics, Vol. 49, No. 4, April 2010, 04DC09 (6 pages).  
    • Yiming Li*, Chih-Hong Hwang, and Ming-Hung Han, “Simulation of Characteristic Variation in 16-nm-Gate FinFET Devices Due to Intrinsic Parameter Fluctuations,” Nanotechnology, Vol. 21, No. 5, March 2010, 095203. 
    • Yiming Li*, Chih-Hong Hwang, Tien-Yeh Li, and Ming-Hung Han, “Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation in Emerging CMOS Technologies,” IEEE Transactions on Electron Devices, Vol. 57, No. 2, Feb. 2010, pp. 437-447.
    • Yiming Li*, “Monotone Iterative Method for Numerical Solution of Nonlinear ODEs in MOSFET RF Circuit Simulation,” Mathematical and Computer Modelling, Vol. 51, No. 3-4, Feb. 2010, pp. 320-328. 
    • Su-Yun Chiang, Yiming Li and Hsiao-Cheng Yu, “A Growth Model for Marketing Evolution of Multi-Generation NAND Flash Memory,” International Journal of Computational Science and Engineering, Vol. 5, No. 1, Jan. 2010, pp. 50-57.
    • Kartika Chandra Sahoo, Men-Ku Lin, Edward-Yi Chang, Tran Binh Tinh, Yiming Li, and Jin-Hua Huang, “Silicon Nitride Nanopillars and Nanocones formed by Nickel Nanoclusters and Inductively Coupled Plasma Etching for Solar Cell Application,” Japanese Journal of Applied Physics, Vol. 48, No. 12, Dec. 2009, 126508. 
    • Yiming Li* and Hui-Wen Cheng, “Optimal Configuration of Hydrogen-Embrittlement Fabricated Nanogaps for Surface-Conduction Electron-Emitter Display,” IEEE Transactions on Nanotechnology, Vol. 8, No. 6, Nov. 2009, pp. 671-677. 
    • Hui-Wen Cheng and Yiming Li*, “Electrical Characteristics Dependence on the Channel Fin Aspect Ratio of Multi-Fin Field Effect Transistors,” Semiconductor Science and Technology, Vol. 24, No. 11, Nov. 2009, 115021. 
    • Kartika Chandra Sahoo, Yiming Li* and Edward Yi Chang, “Numerical Calculation of the Reflectance of Sub-wavelength Structures on Silicon Nitride for Solar Cell Application,” Computer Physics Communications, Vol. 180, No. 10, Oct. 2009, pp. 1721-1729.
    • Bi-Huei Tsai and Yiming Li, “Cluster Evolution of IC Industry from Taiwan to China,” Technological Forecasting and Social Change, Vol. 76, No. 8, Oct. 2009, pp. 1092-1104.
    • Yiming Li*, Ying-Chieh Chen and Chih-Hong Hwang, “Doping Profile and Ge-Dose Optimization for Silicon-Germanium Heterojunction Bipolar Transistors,” Semiconductor Science and Technology, Vol. 24, No. 10, Oct. 2009, 105020. 
    • Yiming Li* and Chih-Hong Hwang, “The Effect of The Geometry Aspect Ratio on The Silicon Ellipse-Shaped Surrounding-Gate Field-Effect Transistor and Circuit,” Semiconductor Science and Technology, Vol. 24, No. 9, Sept. 2009, 095018. 
    • Hui-Wen Cheng, Chih-Hong Hwang, and Yiming Li*, “Impact of Channel Fin Aspect Ratio on Multi-Fin Field Effect Transistors,” International Journal of Electrical Engineering, Vol. 16, No. 4, Aug. 2009, pp. 301-311.
    • Yiming Li*, Chih-Hong Hwang and Tien-Yeh Li, “Random-Dopant-Induced Device Variability in Nano-CMOS and Digital Circuits,” IEEE Transactions on Electron Devices, Vol. 56, No. 8, Aug. 2009, pp. 1588-1597.
    • Yiming Li*, Chih-Hong Hwang, Tien-Yeh Li, and Hui-Wen Cheng, “The Geometric Effect and Programming Current Reduction in Cylindrical-Shaped Phase Change Memory,” Nanotechnology, Vol. 20, No. 27, July 2009, 285701. 
    • Yiming Li* and Hui-Wen Cheng, “Field Emission Dependence on the Tilted Angle of Palladium Nanogaps for Surface Conduction Electron-Emitter Displays,” Micro & Nano Letters, Vol. 4, No. 2, June 2009, pp. 69-73.
    • Yiming Li* and Hui-Wen Cheng, “Field Emission Stability of Anodic Aluminum Oxide Carbon Nanotube Field Emitter in the Triode Structure,” Journal of Nanoscience and Nanotechnology, Vol. 9, No. 5, May 2009, pp. 3301-3307. 
    • Yiming Li*, Chih-Hong Hwang, and Tien-Yeh Li, “Discrete-Dopant-Induced Timing Fluctuation and Suppression in Nanoscale CMOS Circuit,” IEEE Transactions on Circuits and Systems Part II: Express Briefs, Vol. 56, No. 5, May 2009, pp. 379-383.  
    • Yiming Li* and Hsiang-Yu Lo, “Emission Efficiency Dependence on the Width and Thickness of Nanogaps in Surface Conduction Electron-Emitter Displays,” Journal of Nanoscience and Nanotechnology, Vol. 9, No. 5, May 2009, pp. 3271-3277. 
    • Yiming Li* and Chih-Hong Hwang, “DC Baseband and High-Frequency Characteristics of a Silicon Nanowire Field Effect Transistor Circuit,” Semiconductor Science and Technology, Vol. 24, No. 4, Apr. 2009, 045004.
    • Yiming Li*, Chih-Hong Hwang and Hui-Wen Cheng, “Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal-Oxide-Semiconductor Field Effect Transistors,” Japanese Journal of Applied Physics, Vol. 48, No. 4, Apr. 2009, 04C051. 
    • Yiming Li*, Chih-Hong Hwang and Hui-Wen Cheng, “Process-Variation- and Random-Dopants-Induced Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET Devices,” Microelectronic Engineering, Vol. 86, No. 3, March 2009, pp. 277-282. 
    • Yiming Li*, Shao-Ming Yu and Yih-Lang Li, “Intelligent Optical Proximity Correction Using Genetic Algorithm with Model- and Rule-based Approaches,” Computational Materials Science, Vol. 45, No. 1, March 2009, pp. 65-76.
    • Yiming Li*, “Hybrid Intelligent Approach for Modeling and Optimization of Semiconductor Devices and Nanostructures,” Computational Materials Science, Vol. 45, No. 1, Mar. 2009, pp. 41-51.
    • Yiming Li*, “Parallel Genetic Algorithm for Intelligent Model Parameter Extraction of Metal-Oxide- Semiconductor Field Effect Transistors,” Materials and Manufacturing Processes, Vol. 24, No. 3, Mar. 2009, pp. 243-249. 
    • Yiming Li*, “A Simulation-Based Evolutionary Approach to LNA Circuit Design Optimization,” Applied Mathematics and Computation, Vol. 209, No. 1, Mar. 2009, pp. 57-67. 
    • Yiming Li* and Chih-Hong Hwang, “High-Frequency Characteristic Fluctuations of Nano-MOSFET Circuit Induced by Random Dopants,” IEEE Transactions on Microwave Theory and Techniques, Vol. 56, No. 12, Dec. 2008, pp. 2726-2733.
    • Chih-Hao Tsai, Kuan-Jung Chen, Fu-Ming Pan, Hsiang-Yu Lo, Yiming Li, Mei-Chao Chiang, and Chi-Neng Mo, “Effects of Hydrogen Plasma Treatment on Field-Emission Characteristics of Palladium Nanogap Emitters,” Journal of The Electrochemical Society, Vol. 155, No. 12, Dec. 2008, pp. J361-J364. 
    • Yiming Li*, Yih-Lang Li, and Shao-Ming Yu, “Design Optimization of a Current Mirror Amplifier Integrated Circuit Using a Computational Statistics Technique,” Mathematics and Computers in Simulation, Vol. 79, No. 4, Dec. 2008, pp. 1165-1177. 
    • Yiming Li*, Shao-Ming Yu, and Yih-Lang Li, “Electronic Design Automation Using a Unified Optimization Framework,” Mathematics and Computers in Simulation, Vol. 79, No. 4, Dec. 2008, pp. 1137-1152.
    • Yiming Li*, Chih-Hong Hwang, Chung-Le Chen, Shuoting Yan, and Jen-Chung Lou, “UV Illumination Technique for Leakage Current Reduction in a-Si:H Thin Film Transistors,” IEEE Transactions on Electron Devices, Vol. 55, No. 11, Nov. 2008, pp. 3314-3318. 
    • Yiming Li*, Hsueh-Yung Chao and Hsiang-Yu Lo, “High Field Emission Efficiency Surface Conduction Electron Emitters,” Journal of Computational Electronics, Vol. 7, No. 3, Sept. 2008, pp. 440-444.
    • Yiming Li* and Ta-Ching Yeh, “Three-Dimensional Simulation of Field Emission Triode Structure Using Carbon-Nanotube Emitters,” Journal of Computational Electronics, Vol. 7, No. 3, Sept. 2008, pp. 332-336. 
    • Yiming Li*, Shao-Ming Yu, Chih-Hong Hwang, and Yi-Ting Kuo, “Temperature Dependence on the Contact Size of GeSbTe Films for Phase Change Memories,” Journal of Computational Electronics, Vol. 7, No. 3, Sept. 2008, pp. 138-141. 
    • Hsiang-Yu Lo, Yiming Li*, Chih-Hao Tsai, Hsueh-Yung Chao, and Fu-Ming Pan, “Effect of Process Variation on Field Emission Characteristics in Surface Conduction Electron-Emitters,” IEEE Transactions on Nanotechnology, Vol. 7, No. 4, July 2008, pp. 434-439.
    • Yiming Li* and Hui-Wen Cheng, “Numerical Simulation of Field Emission Efficiency of Anodic Aluminum Oxide Carbon Nanotube Field Emitter in the Triode Structure,” Computer Physics Communications, Vol. 179, No. 1-3, July 2008, pp. 107-111. 
    • Yiming Li*, Chih-Hong Hwang, and Hsuan-Ming Huang, “Large-Scale Atomistic Approach to Discrete-Dopant-Induced Characteristic Fluctuations in Silicon Nanowire Transistors,” Physica Status Solidi (a), Vol. 205, No. 6, June 2008, pp. 1505-1510. 
    • Yiming Li*, Shao-Ming Yu, Jiunn-Ren Hwang, and Fu-Liang Yang, “Discrete Dopant Fluctuations in 20-nm/15-nm-Gate Planar CMOS,” IEEE Transactions on Electron Devices, Vol. 55, No. 6, June 2008, pp. 1449-1455. 
    • Yiming Li*, Shao-Ming Yu and Yih-Lang Li, “Parallel Solution of Large-Scale Eigenvalue Problem for Master Equation in Protein Folding Dynamics,” Journal of Parallel and Distributed Computing, Vol. 68, No. 5, May 2008, pp. 678-685. 
    • Yiming Li*, Hung-Ming Chen, Shao-Ming Yu, Jiunn-Ren Hwang, and Fu-Liang Yang, “Strained CMOS Devices with Shallow-Trench-Isolation Stress Buffer Layers,” IEEE Transactions on Electron Devices, Vol. 55, No. 4, Apr. 2008, pp. 1085-1089.
    • Hsiang-Yu Lo, Yiming Li*, Chih-Hao Tsai, and Fu-Ming Pan, “Analysis of Field Emission of Fabricated Nanogap in Pd Strips for Surface Conduction Electron-Emitter Displays,” Japanese Journal of Applied Physics. Vol. 47, No. 4, Apr. 2008, pp. 2972-2972.
    • Yiming Li* and Chih-Hong Hwang, “Discrete-dopant-fluctuated threshold voltage roll-off in sub-16 nm bulk fin-type field effect transistors,” Japanese Journal of Applied Physics, Vol. 47, No. 4, Apr. 2008, pp. 2580-2584. 
    • Yiming Li*, Hui-Wen Cheng, Chen-Chun Lin, and Fu-Ming Pan, “Field Emission Property of Carbon Nanotube Field Emitters in Triode Structure Fabricated with Anodic Aluminum Oxide Templates,” Japanese Journal of Applied Physics. Vol. 47, No. 4, Apr. 2008, pp. 3282-3286.  
    • Yiming Li* and Hsiang-Yu Lo, “Surface Conduction Electron Emission in Palladium Hydrogenation Nanogaps,” Journal of Physics D: Applied Physics, Vol. 41, No. 8, April 2008, 085301. 
    • Yiming Li*, Jung Y. Huang and Bo-Shian Lee, “Effect of the Single Grain Boundary Position on Surrounding-Gate Polysilicon Thin Film Transistors,” Semiconductor Science and Technology, Vol. 23, No. 1, Jan. 2008, 015019. 
    • Yiming Li* and Chih-Hong Hwang, “Effect of Fin Angle on Electrical Characteristics of Nanoscale Round-Top-Gate Bulk FinFETs,” IEEE Transactions on Electron Devices, Vol. 54, No. 12, Dec. 2007, pp. 3426-3429. 
    • Yiming Li* and Shao-Ming Yu, “A Coupled-Simulation-and-Optimization Approach to Nanodevice Fabrication with Minimization of Electrical Characteristics Fluctuation,” IEEE Transactions on Semiconductor Manufacturing, Vol. 20, No. 4, Nov. 2007, pp. 432-438.
    • Hsiang-Yu Lo, Yiming Li*, Hsueh-Yung Chao, Chih-Hao Tsai, and Fu-Ming Pan, “Field-Emission Properties of Novel Palladium Nanogaps for Surface Conduction Electron-Emitter,” Nanotechnology, Vol. 18, No. 47, Nov. 2007, pp. 571-577.
    • Yiming Li* and Chih-Hong Hwang, “Discrete-Dopant-Induced Characteristic Fluctuations in 16 nm Multiple-Gate Silicon-On-Insulator Devices,”  Journal of Applied Physics, Vol. 102, No. 8, Oct. 2007, 084509.
    • Yiming Li* and Chih-Hong Hwang, “Electrical Characteristic Fluctuations in 16nm Bulk-FinFET Devices,”  Microelectronic Engineering, Vol. 84, No. 9-10, Sep.-Oct. 2007, pp. 2093-2096.
    • Yiming Li*, Shao-Ming Yu and Hung-Ming Chen, “Process-Variation- and Random-Dopants-Induced Threshold Voltage Fluctuations in Nanoscale CMOS and SOI Devices,”  Microelectronic Engineering, Vol. 84, No. 9-10, Sep.-Oct. 2007, pp. 2117-2120.
    • Shih-Ching Lo, Yiming Li* and Shao-Ming Yu, “Analytical Solution of Nonlinear Poisson Equation for Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors,”  Mathematical and Computer Modelling, Vol. 46, No. 1-2, July 2007, pp. 180-188.
    • Hung-Mu Chou, Jam-Wem Lee and Yiming Li*, “A Floating Gate Design for Electrostatic Discharge Protection Circuits,”  Integration-the VLSI Journal, Vol. 40, No. 2, Feb. 2007, pp. 161-166.
    • Yiming Li*, “An Automatic Parameter Extraction Technique for Advanced CMOS Device Modeling Using Genetic Algorithm,”  Microelectronic Engineering, Vol. 84, No. 2, Feb. 2007, pp. 260-272.
    • Shao-Ming Yu, Jam-Wem Lee and Yiming Li*, “An Optimal Silicidation Technique for Electrostatic Discharge Protection Sub-100 nm CMOS Devices in VLSI Circuit,”  Microelectronic Engineering, Vol. 84, No. 2, Feb. 2007, pp. 213-217.
    • Yiming Li*, “A Two-Dimensional Thin Film Transistor Simulation Using Adaptive Computing Technique,”  Applied Mathematics and Computation, Vol. 184, No. 1 Jan. 2007, pp. 73-85.
    • Yiming Li* and Cheng-Kai Chen, “A Simulation-Based Evolutionary Technique for Inverse Doping Profile Problem of Sub-65 nm CMOS Devices,”  Journal of Computational Electronics, Vol. 5, No. 4, Dec. 2006, pp. 365-370.
    • Yiming Li*, “Numerical Simulation and Comparison of Electrical Characteristics between Uniaxial Strained Bulk and SOI FinFETs,”  Journal of Computational Electronics, Vol. 5, No. 4, Dec. 2006, pp. 371-376.
    • Todd G. MCKenzie and Yiming Li*, “A Drain-Current Model for DG PMOSFETs with Fabricated 35 nm Device Comparison,”  International Journal of Computational Science and Engineering, Vol. 2, No. 3-4, Nov. 2006, pp. 144-147.
    • Yiming Li*, “Numerical Solutions of a Master Equation for Protein Folding Kinetics,”  International Journal of Bioinformatics Research and Applications, Vol. 2, No. 4, Oct. 2006, pp. 420-429.
    • Yiming Li* and Shao-Ming Yu, “Comparison of Random-Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field-Effect Transistors,”  Japanese Journal of Applied Physics, Vol. 45, No. 9A, Sept. 2006, pp. 6860-6865.
    • Jam-Wem Lee and Yiming Li*, “Effective Electrostatic Discharge Protection Circuit Design Using Novel Fully Silicided N-MOSFETs in Sub-100 nm Device era,”  IEEE Transactions on Nanotechnology, Vol. 5, No. 3, May 2006, pp. 211-215.
    • Yiming Li* and Wei-Hsin Chen, “Numerical Simulation of Electrical Characteristics in Nanoscale Si/GaAs MOSFETs,”  Journal of Computational Electronics, Vol. 5, No. 2-3, July 2006, pp. 255-258.
    • Yiming Li* and Shao-Ming Yu, “A Study of Threshold Voltage Fluctuations of Nanoscale Double Gate Metal-Oxide-Semiconductor Field Effect Transistors Using Quantum Correction Simulation,”  Journal of Computational Electronics, Vol. 5, No. 2-3, July 2006, pp. 125-129.
    • Yiming Li*, “An Iterative Method for Single and Vertically Stacked Semiconductor Quantum Dots Simulation,”  Mathematical and Computer Modelling, Vol. 42, No. 7-8, Oct. 2005, pp. 711-718.
    • Yiming Li*, Hung-Mu Chou and Jam-Wem Lee, “Investigation of Electrical Characteristics on Surrounding-Gate and Omega-Shaped-Gate Nanowire FinFETs,” IEEE Transactions on Nanotechnology, Vol. 4, No. 5, Sep. 2005, pp. 510-516.
    • Yiming Li* and Hung-Mu Chou, “A Comparative Study of Electrical Characteristic on Sub-10 nm Double Gate MOSFETs,”  IEEE Transactions on Nanotechnology, Vol. 4, No. 5, Sep. 2005, pp. 645-647.
    • Yiming Li*, Hung-Mu Chou, Jam-Wem Lee, and Bo-Shian Lee, “A Three-Dimensional Simulation of Electrostatic Characteristics for Carbon Nanotube Array Field Effect Transistors,” Microelectronic Engineering, Vol. 81, No. 2-4, August 2005, pp. 434-440.
    • Hung-Mu Chou, Shao-Ming Yu, Jam-Wem Lee, and Yiming Li*, “A Compact Model for Electrostatic Discharge Protection Nanoelectronics Simulation,”  International Journal of Nanotechnology, Vol. 2, No. 3, 2005, pp. 226-238.
    • Yiming Li* and Shao-Ming Yu, “A Numerical Iterative Method for Solving Schrödinger and Poisson Equations in Nanoscale Single, Double and Surrounding Gate Metal-Oxide-Semiconductor Structures,” Computer Physics Communications, Vol. 169, No. 1-3, July 2005, pp. 309-312.
    • Yiming Li*, “Magnetization and Magnetic Susceptibility in Nanoscale Vertically Coupled Semiconductor Quantum Rings,” Journal of Computational Electronics. Vol. 4, No. 1-2, April 2005, pp. 135-138.
    • Yiming Li*, Shao-Ming Yu and Jam-Wem Lee, “Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current,” Japanese Journal of Applied Physics, Vol. 44, No. 4B, April 2005, pp. 2132-2136.
    • Yiming Li*, “Transition Energies of Vertically Coupled Multilayer Nanoscale InAs/GaAs Semiconductor Quantum Dots of Different Shapes,” Japanese Journal of Applied Physics, Vol. 44, No. 4B, April 2005, pp. 2642-2646.
    • Yiming Li*,”A Comparison of Quantum Correction Models for Nanoscale MOS Structures Under Inversion Conditions," Materials Science Forum, Vol. 480-481, Mar. 2005, pp. 603-610.
    • Yiming Li* and Shao-Ming Yu, “A Parallel Adaptive Finite Volume Method for Nanoscale Double-gate MOSFETs Simulation,” Journal of Computational and Applied Mathematics, Vol. 175, No. 1, March 2005, pp. 87-99.
    • Yiming Li* and Shao-Ming Yu, “A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors,” Journal of Computational Electronics. Vol. 3, No. 3-4, Oct. 2004, pp. 257-261.
    • Yiming Li*, Jam-Wem Lee and Hong-Mu Chou, “Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire FETs,” Journal of Computational Electronics, Vol. 3, No. 3-4, Oct. 2004, pp. 251-255.
    • Yiming Li*, “Vertical Coupling Effects and Transition Energies in Multilayer InAs/GaAs Quantum Dots,” Surface Science, Vol. 566-568, Part 2, Sep. 2004, pp. 1057-1066.
    • Yiming Li* and Shao-Ming Yu, “A Unified Quantum Correction Model for Nanoscale Single- and Double-Gate MOSFETs under Inversion Conditions,” Nanotechnology, Vol. 15, No. 8, August 2004, pp. 1009-1016.
    • Kuen-Yu Huang, Yiming Li* and Chien-Ping Lee, “Computer Simulation of Multifinger Heterojunction Bipolar Transistor with Self-Heating and Thermal Coupling Models,” Microelectronic Engineering, Vol. 75, No. 2, August 2004, pp. 137-144.
    • Yiming Li*, “A Quantum Correction Poisson Equation for Metal-Oxide-Semiconductor Structure Simulation,” Semiconductor Science and Technology, Vol. 19, No. 7, July 2004, pp. 917-922.
    • Yiming Li* and Shao-Ming Yu, “A Two-Dimensional Quantum Transport Simulation of Nanoscale Double-Gate MOSFETs using Parallel Adaptive Technique,” IEICE Transactions on Information and Systems, Vol. E87-D, No. 7, July 2004, pp. 1751-1758.
    • Yiming Li* and Hsiao-Mei Lu, “Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings,” Japanese Journal of Applied Physics, Vol. 43, No. 4B, April 2004, pp. 2104-2109.
    • Jam-Wem Lee, Yiming Li*, Alice Chao, and Howard Tang, “Electrostatic Discharge Protection Under Pad Design for Copper-Low-K VLSI Circuits,” Japanese Journal of Applied Physics, Vol. 43, No. 4B, April 2004, pp. 2302-2305.
    • Tien-Sheng Chao, Yao-Jen Lee, Chun-Yang Huang, Horng-Chih Lin, Yiming Li, and Tiao-Yuan Huang, “Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors,” Japanese Journal of Applied Physics, Vol. 43, No. 4A, April 2004, pp. 1300-1304.
    • Yiming Li* and Yen-Yu Cho, “Intelligent BSIM4 Model Parameter Extraction for Sub-100 nm MOSFET era,” Japanese Journal of Applied Physics, Vol. 43, No. 4B, April 2004, pp. 1717-1722.
    • Yiming Li*, Ting-Wei Tang and Shao-Ming Yu, “A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions,” Journal of Computational Electronics, Vol. 2, No. 2-4, Dec. 2003, pp. 491-495.
    • Yiming Li* and Hsiao-Mei Lu, “Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings,” Journal of Computational Electronics, Vol. 2, No. 2-4, Dec. 2003, pp. 487-490.
    • Yiming Li*, “Numerical Calculation of Electron Energy States for Nanoscopic InAs/GaAs Quantum Rings,” International Journal of Modern Physics C: Physics and Computers, Vol. 14, No. 8, Oct. 2003, pp. 995-1005.
    • Kuen-Yu Huang, Yiming Li* and Chien-Ping Lee, “A Time Domain Approach to Simulation and Characterization of RF HBT Two-Tone Intermodulation Distortion,” IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No. 10, Oct. 2003, pp. 2055-2062.
    • Yiming Li*, “A Parallel Monotone Iterative Method for the Numerical Solution of Multi-dimensional Semiconductor Poisson Equation,” Computer Physics Communications, Vol. 153, No. 3, July 2003, pp. 359-372.
    • Yiming Li*, “Numerical Calculation of Electronic Structure for Three-dimensional Nanoscale Semiconductor Quantum Dots and Rings,” Journal of Computational Electronics, Vol. 2, No. 1, July 2003, pp. 49-57.
    • Yiming Li*, “Electronic Structures of Three-dimensional Triangular Torus-shaped Quantum Rings Under External Magnetic Fields,” Physica Status Solidi (c), Vol. 0, No. 4, July 2003, pp. 1141-1144.
    • Yiming Li*, Hsiao-Mei Lu, Oleksandr Voskoboynikov, Chien-Ping Lee, and Simon M. Sze, “Dependence of Energy Gap on Magnetic Field in Semiconductor Nano-scale Quantum Rings,” Surface Science, Vol. 532-535, June 2003, pp. 811-815.
    • Yiming Li*, Hsiao-Mei Lu, Oleksandr Voskoboynikov, Chien-Ping Lee, and Simon M. Sze, “Computer Simulation of Magnetization for 3D Ellipsoidal Torus-shaped InAs/GaAs Quantum Rings,” International Journal of Modern Physics C: Physics and Computers, Vol. 14, No. 4, May 2003, pp. 501-507.
    • Yiming Li* and Kuen-Yu Huang, “A Novel Numerical Approach to Heterojunction Bipolar Transistors Circuit Simulation,” Computer Physics Communications, Vol. 152, No. 3, May 2003, pp. 307-316.
    • Yiming Li*, Yen-Yu Cho, Chuan-Sheng Wang, and Kuen-Yu Huang, “A Genetic Algorithm Approach to InGaP/GaAs HBT Parameter Extraction and RF Characterization,” Japanese Journal of Applied Physics, Vol. 42, No. 4B, April 2003, pp. 2371-2374.
    • Yiming Li*, Tien-Sheng Chao and Simon M. Sze, “A Novel Parallel Approach for Quantum Effect Simulation in Semiconductor Devices,” International Journal of Modelling and Simulation, Vol. 23, No. 2, April 2003, pp. 94-102.
    • Yiming Li* and Hsiao-Mei Lu, “Geometric Variations and Magnetic Field Effects on Electron Energy States InAs/GaAs Quantum Rings,” Japanese Journal of Applied Physics, Vol. 42, No. 4B, April 2003, pp. 2404-2407.
    • Yiming Li*, Jam-Wem Lee and Simon M. Sze, “Optimization of the Anti-Punch-Through Implant for Electrostatic Discharge Protection Circuit Design,” Japanese Journal of Applied Physics, Vol. 42, No. 4B, April 2003, pp. 2152-2155.
    • Yiming Li*, Hsiao-Mei Lu, Ting-Wei Tang, and Simon M. Sze, “A Novel Parallel Adaptive Monte Carlo Method for Nonlinear Poisson Equation in Semiconductor Devices,” Mathematics and Computers in Simulation, Vol. 62, No. 3-6, March 2003, pp. 413-420.
    • Yiming Li* and Hsiao-Mei Lu, “An Investigation of Magnetic Field Effects on Energy States for Nanoscale InAs/GaAs Quantum Rings and Dots,” IEICE Transactions on Electronics, Vol. E86-C, No. 3, March 2003. pp. 466-473.
    • Ting-Wei Tang and Yiming Li*, “A SPICE-Compatible Model for Nanoscale MOSFET Capacitor Simulation Under the Inversion Condition,” IEEE Transactions on Nanotechnology, Vol. 1, No. 4, Dec. 2002, pp. 243-246.
    • Yiming Li*, Ting-Wei Tang and Xinlin Wang, “Modeling of Quantum Effects for Ultrathin Oxide MOS Structures with an Effective Potential,” IEEE Transactions on Nanotechnology, Vol. 1, No. 4, Dec. 2002, pp. 238-242.
    • Oleksandr Voskoboynikov, Yiming Li*, Hsiao-Mei Lu, Cheng-Feng Shih, and Chien-Ping Lee, “Energy States and Magnetization in Nanoscale Quantum Rings,” Physical Review B, Vol. 66, Oct. 2002, pp. 155306-1-155306-6.
    • Ting-Wei Tang, Xinlin Wang and Yiming Li*, “Discretization Scheme for the Density-Gradient Equation and Effect of Boundary Conditions,” Journal of Computational Electronics, Vol. 1, No. 3, Oct. 2002, pp. 389-393.
    • Yiming Li*, Oleksandr Voskoboynikov, Chien-Ping Lee, Simon M. Sze, and Oleg Tretyak, “Electron Energy State Spin Splitting in 3D Cylindrical Semiconductor Quantum Dots,” European Physical Journal B, Vol. 28, No. 4, Aug. 2002, pp. 475-481.
    • Yiming Li*, Oleksandr Voskoboynikov, Chien-Ping Lee, and Simon M. Sze, “Calculation of Induced Electron States in Three Dimensional Semiconductor Artificial Molecules,” Computer Physics Communications, Vol. 147, No. 1-2, August 2002, pp. 209-213.
    • Yiming Li*, Tien-Sheng Chao and Simon M. Sze, “A Domain Partition Approach to Parallel Adaptive Simulation of Dynamic Threshold Voltage MOSFET,” Computer Physics Communications, Vol. 147, No. 1-2, August 2002, pp. 697-701.
    • Yiming Li*, Simon M. Sze and Tien-Sheng Chao, “A Practical Implementation of Parallel Dynamic Load Balancing for Adaptive Computing in VLSI Device Simulation,” Engineering with Computers, Vol. 18, No. 2, Aug. 2002, pp. 124-137.
    • Yiming Li*, Jam-Wem Lee, Ting-Wei Tang, Tien-Sheng Chao, Tien-Fu Lei, and Simon M. Sze, “Numerical Simulation of Quantum Effects in High-k Gate Dielectric MOS Structures using Quantum Mechanical Models,” Computer Physics Communications, Vol. 147, No. 1-2, August 2002, pp. 214-217.
    • Yiming Li*, Oleksandr Voskoboynikov, Chien-Ping Lee, and, Simon M. Sze, “A Computational Technique for Electron Energy States Calculation in Nano-Scopic Three-Dimensional InAs/GaAs Semiconductor Quantum Rings Simulation,” Journal of Computational Electronics, Vol. 1, No. 1-2, July. 2002, pp. 227-230.
    • Yiming Li*, Oleksandr Voskoboynikov, Chien-Ping Lee, Simon M. Sze, and Oleg Tretyak, “A Computational Method for Energy Level Spin Splitting Simulation in InAs/GaAs Semiconductor Quantum Dots,” International Journal of Modern Physics C: Physics and Computers, Vol. 13, No. 4, May 2002, pp. 453-464.
    • Yiming Li*, Oleksandr Voskoboynikov, Chien-Ping Lee, Simon M. Sze, and Oleg Tretyak, “Effect of Shape and Size on Electron Transition Energies of InAs Semiconductor Quantum Dots,” Japanese Journal of Applied Physics, Vol. 41, No 4B, April 2002, pp. 2698-2700.
    • Yiming Li*, Jinn-Liang Liu, Tien-Sheng Chao, and Simon M. Sze, “A New Parallel Adaptive Finite Volume Method for the Numerical Simulation of Semiconductor Devices,” Computer Physics Communications, Vol. 142, No. 1-3, Dec. 2001, pp. 285-289.
    • Yiming Li*, Oleksandr Voskoboynikov, Chien-Ping Lee, and Simon M. Sze, “Computer Simulation of Electron Energy Levels for Different Shape InAs/GaAs Semiconductor Quantum Dots,” Computer Physics Communications, Vol. 141, No. 1, Nov. 2001, pp. 66-72.
    • Yiming Li*, Oleksandr Voskoboynikov, Chien-Ping Lee, Simon M. Sze, and Oleg Tretyak, “Electron Energy State Dependence on the Shape and Size of Semiconductor Quantum Dots,” Journal of Applied Physics, Vol. 90, No. 12, Dec. 2001, pp. 6416-6420.
    • Yiming Li*, Jinn-Liang Liu, Oleksandr Voskoboynikov, Chien-Ping Lee, and Simon M. Sze, “Electron Energy Level Calculations for Cylindrical Narrow Gap Semiconductor Quantum Dot,” Computer Physics Communications, Vol. 140, No. 3, Nov. 2001, pp. 399-404.
    • Yiming Li*, Oleksandr Voskoboynikov, Chien-Ping Lee, and Simon M. Sze, “Energy and Coordinate Dependent Effective Mass and Confined Electron States in Quantum Dots,” Solid State Communications, Vol. 120, No. 2-3, Sep. 2001, pp. 79-83.

  • 會議論文
    • Yiming Li*, Han-Tung Chang, Chun-Ning Lai, Pei-Jung Chao, and Chieh-Yang Chen, “Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET Devices,” IEEE International Electron Devices Meeting (IEEE IEDM 2015), Washington, DC, Dec. 7-9, 2015, p. 34p4 (4 pages).
    • Yao-Jen Lee, Fu-Ju Hou, Shang-Shiun Chuang, Fu-Kuo Hsueh, Kuo-Hsing Kao, Po-Jung Sung, Wei-You Yuan, Jay-Yi Yao, Yu-Chi Lu, Kun-Lin Lin, Chien-Ting Wu, Hisu-Chih Chen, Bo-Yuan Chen, Guo-Wei Huang, Henry J. H. Chen, Jiun-Yun Li, Yiming Li, Seiji Samukawa, Tien-Sheng Chao3, Tseung-Yuen Tseng, Wen-Fa Wu, Tuo-Hung Hou, and Wen-Kuan Yeh, “Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology,” IEEE International Electron Devices Meeting (IEEE IEDM 2015), Washington, DC, Dec. 7-9, 2015, p. 15p1 (4 pages).
    • Yao-Jen Lee, Ta-Chun Cho, Po-Jung Sung, Kuo-Hsing Kao, Fu-Kuo Hsueh, Fu-Ju Hou, Po-Cheng Chen, Hsiu-Chih Chen, Chien-Ting Wu, Shu-Han Hsu, Yi-Ju Chen, Yao-Ming Huang, Yun-Fang Hou, Wen-Hsien Huang, Chih-Chao Yang, Bo-Yuan Chen1, Kun-Lin Lin, Min-Cheng Chen, Chang-Hong Shen, Guo-Wei Huang, Kun-Ping Huang, Michael I. Current, Yiming Li, Seiji Samukawa, Wen-Fa Wu, Jia-Min Shieh, Tien-Sheng Chao, and Wen-Kuan Yeh, "High Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs Applications,” IEEE International Electron Devices Meeting (IEEE IEDM 2015), Washington, DC, Dec. 7-9, 2015, p. 6p2 (4 pages).
    • Ming-Yi Lee, Yi-Chia Tsai, Yiming Li*, and Seiji Samukawa, “Miniband Dependence on the Density of Ge/Si Quantum Dots for Solar Cell Application,” International Electron Devices and Materials Symposium (IEDMS 2015), Tainan, Taiwan, Nov. 19-20, 2015, p. C13 (2 pages).
    • Chieh-Yang Chen and Yiming Li*, “Modeling Threshold Voltage Fluctuation of Multi-Fin HKMG Bulk FinFET Devices Induced by Random Dopant Fluctuation and Work Function Fluctuation,” International Electron Devices and Materials Symposium (IEDMS 2015), Tainan, Taiwan, Nov. 19-20, 2015, p. B23 (2 pages).
    • Cheng-Hao Huang, Wen-Che Liu, Chieh-Yang Chen, and Yiming Li*, “Optimal Characteristic of 14-nm-Gate InGaAs Multiple-Gate MOSFET Devices,” International Electron Devices and Materials Symposium (IEDMS 2015), Tainan, Taiwan, Nov. 19-20, 2015, p. B15 (2 pages).
    • Ming-Yi Lee, Yi-Chia Tsai, Yiming Li*, and Seiji Samukawa, “Energy Spectra Simulation of Neutral-Beam-Etching Fabricated Semiconductor Nanodisk,” Presented in Twelfth International Conference on Flow Dynamics, Sendai, Japan, Oct. 27-29, 2015.
    • Yi-Chia Tsai, Ming-Yi Lee, Yiming Li*, and Seiji Samukawa, “Miniband Formulation in Ge/Si Quantum Dot Array,” Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo, Japan, Sept. 27-30, 2015, pp. 882-883.
    • Li-Wei Yang, Yi-Chia Tsai, Yiming Li*, Oleksandr Voskoboynikov, Aiko Higo, Akihiro Murayama, and Seiji Samukawa, “Electron g-factor Engineering in GaAs Quantum Nano-Disks Fabricated by Defect-Free Neutral Beam Etching Process,” Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo, Japan, Sept. 27-30, 2015, pp. 430-431.
    • Yi-Chia Tsai, Ming-Yi Lee, Yiming Li*, and Seiji Samukawa, “Numerical Simulation of Highly Periodical Ge/Si Quantum Dot Array for Intermediate-Band Solar Cell Applications,” 2015 IEEE International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2015), Washington, DC, Sept. 9-11, 2015, pp. 68-71.
    • Cheng-Hao Huang and Yiming Li*, “Electrical Characteristic of InGaAs Multiple-Gate MOSFET Devices,” 2015 IEEE International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2015), Washington, DC, Sept. 9-11, 2015, pp. 357-360.
    • Ming-Yi Lee, Yi-Chia Tsai, Yiming Li*, and Seiji Samukawa, Electronic Structure Dependence on the Density, Size and Shape of Ge/Si Quantum Dots Array,” The 18th IEEE International Workshop on Computational Electronics (IEEE IWCE 2015), West Lafayette, IN, Sept. 2-4, 2015 (4 pages).
    • Chun-Ning Lai, Chieh-Yang Chen, and Yiming Li*, “Nanosized-Metal-Grain-Induced Characteristic Fluctuation in Gate-All-Around Si Nanowire Metal-Oxide-Semiconductor Devices,” The 18th IEEE International Workshop on Computational Electronics (IEEE IWCE 2015), West Lafayette, IN, Sept. 2-4, 2015 (4 pages).
    • Yiming Li* and Chieh-Hsueh Chiang, “A Novel Pull-Down Structure for High-Performance ASG Driver Circuits,” The 15th International Meeting on Information Display (IMID 2015), EXCO, Daegu, Republic of Korea, Aug. 18-21, 2015, p. 228.
    • Yi-Hsuan Hung, Sheng-Chin Hung, Chieh-Hsueh Chiang, and Yiming Li*, “TFT-Circuit-Simulation-Based Multi-objective Evolutionary Algorithm for Dynamic Specification Design Optimization of ASG Driver Circuits,” The 15th International Meeting on Information Display (IMID 2015), EXCO, Daegu, Republic of Korea, Aug. 18-21, 2015, p. 191.
    • Sheng-Chin Hung, Yi-Hsuan Hung, Chieh-Hsueh Chiang, and Yiming Li*, “An Optimal ASG Driver Circuit with New Multi-Level Clock Driving Technique,” The 15th International Meeting on Information Display (IMID 2015), EXCO, Daegu, Republic of Korea, Aug. 18-21, 2015, p. 137. 
    • Li-Wei Yang, Chin-Min Yang, Yiming Li*, and Oleksandr Voskoboynikov, “Efficient simulation of the effective g-factor for carriers confined in semiconductor nano-objects,” Accepted by The Congress on Numerical Methods in Engineering (CMN 2015), Instituto Superior Tecnico, Lisboa, June 29-July 2, 2015, p. 259 (20 pages).
    • Ming-Yi Lee, Yi-Chia Tsai, Yiming Li*, and Seiji Samukawa, “Modeling and Simulation of Well-Ordered Ge/Si-Nanodisk Array for Quantum Dot Solar Cells,” Presented in IEEE The 4th International Symposium on Next-Generation Electronics (IEEE ISNE 2015), Taipei, Taiwan, May 4-6, 2015.
    • Chieh-Yang Chen, Wen-Tsung Huang, and Yiming Li*, “Electrical Characteristic and Power Consumption Fluctuations of Trapezoidal Bulk FinFET Devices and Circuits Induced by Random Line Edge Roughness,” IEEE The 16th International Symposium on Quality Electronic Design (IEEE ISQED 2015), Santa Clara, CA, March 12-14, 2015, pp. 61-64.
    • Ming-Yi Lee, Yiming Li*, and Seiji Samukawa, “In-Plane 3D Miniband Calculation of Silicon Nanostructure Array for Solar Cell Applications,” 2015 The 1st International Workshop on Quantum Nanostructure; Physics and Solar Cell Applications, Miyazygi, Japan, Feb. 19-20, 2015.
    • Yao-Jen Lee, T.-C. Cho, K.-H. Kao, P.-J. Sung, F.-K. Hsueh, P.-C. Huang, C.-T. Wu, S.-H. Hsu, W. -H. Huang, H.-C. Chen, Yiming Li, M. I. Current, B. Hengstebeck, J. Marino, T. Büyüklimanli, J.-M. Shieh, T.-S. Chao, W.-F. Wu, and W.-K. Yeh, “A Novel Junctionless FinFET Structure with Sub-5nm Shell Doping Profile by Molecular Monolayer Doping and Microwave Annealing,” IEEE International Electron Devices Meeting (IEEE IEDM), San Francisco, CA, Dec. 15-17, 2014, pp. 788-791. 
    • Sheng-Chin Hung, Chieh-Yang Chen, Chien-Hsueh Chiang, and Yiming Li*, “Circuit-Simulation-Based Multi-objective Evolutionary Algorithm with Multi-Level Clock Driving Technique for a-Si:H TFTs Gate Driver Circuit Design Optimization,” International Computer Symposium, Taichung, Taiwan, Dec. 12-14, 2014, pp. 143-152. 
    • Cheng-Hao Huang, and Yiming Li*, “DC/AC/RF Characteristics of III-V Trigate MOSFET Devices with In1-xGaxAs Channel Capping Layer,” International Electron Devices and Materials Symposium, Hualien, Taiwan, Nov. 20-21, 2014, p. 51.
    • Pei-Jung Chao, and Yiming Li*, “Influence of Channel Aspect Ratio and Work Function Fluctuation on Gate-All-Around Silicon-Germanium Nanowire MOSFET,” International Electron Devices and Materials Symposium, Hualien, Taiwan, Nov. 20-21, 2014, pp. 39-40.
    • Li-Wen Chen, and Yiming Li*, “Effect of Channel-Fin Width and Angle on Optimal Characteristic of Trapezoidal-Shaped Bulk FinFET Devices,” International Electron Devices and Materials Symposium, Hualien, Taiwan, Nov. 20-21, 2014, pp. 20-21.
    • Ping-Hsun Su, and Yiming Li*, “Process Variation Characterization and Optimization to Reduce Device Performance Variability Using Ring Oscillator of 16-nm-Gate Bulk FinFETs,” Asia Conference on Nanoscience and Nanotechnology, Jeju, Korea, Oct. 27-29, 2014, pp. 386.
    • Saurabh Tomar, Pei-Jung Chao, Han-Tung Chang, and Yiming Li*, “On Channel Shape Variation of 10-nm-Gate Gate-All-Around Silicon Nanowire MOSFETs,” 15th Trends in Nanotechnology International Conference, Barcelona, Spain, Oct. 27-31, 2014, pp. 137-138.
    • Sheng-Chin Hung, Chien-Hsueh Chiang, and Yiming Li*, “Circuit-Simulation-Based Multi-objective Evolutionary Algorithm for Design Optimization of a-Si:H TFTs Gate Driver Circuits under Multi-Level Clock Driving,” 6th International Conference on Computer Aided Design for Thin-Film Transistors, Nanjing, China, Oct. 15-17, 2014, p. 59.
    • Chien-Hsueh Chiang, and Yiming Li*, “Design Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications,” 6th International Conference on Computer Aided Design for Thin-Film Transistors, Nanjing, China, Oct. 15-17, 2014, p. 53.
    • Wen-Tsung Huang and Yiming Li*, “The Impact of Fin/Sidewall/Gate Line Edge Roughness on Trapezoidal Bulk FinFET Devices,” International Conference on Simulation of Semiconductor Processes and Devices, Yokohama, Japan, Sep. 9-11, 2014, pp. 281-284.
    • Cheng-Hao Huang and Yiming Li*, “Impact of In1-xGaxAs Capping Layer on Characteristic of III-V Trigate MOSFET Devices,” International Conference on Solid State Devices and Materials, Yokohama, Japan, Sep. 8-11, 2014, pp. 634-635.
    • Niraj Man Shrestha, Yuen-Yee Wang, Yiming Li*, and Edward Yi Chang, “Electrical Characteristic Simulation of Novel AlGaN/GaN Vertical HEMT with Multi-Aperture and SiO2 Current Blocking Layer,” International Conference on Solid State Devices and Materials, Tsukuba, Japan, Sep. 8-11, 2014, pp. 136-137.
    • Sheng-Chin Hung, Chien-Hsueh Chiang, and Yiming Li*, “Falling-Time and Ripple Optimization of a-Si:H TFTs Gate Driver Circuit Using Circuit-Simulated-Based Multi-objective Evolutionary Algorithm with Novel 3-Level Clock Driving Methodology,” 18th Nano Engineering and Microsystem Technology Conference, Tainan, Taiwan, Aug.21-22, 2014, p. 54.
    • Cheng-Hao Huang and Yiming Li*, “Electrical Characteristic of 14-nm III-V Trigate MOSFET with Various In1-xGaxAs / In0.53Ga0.47As Channel Films,” 18th Nano Engineering and Microsystem Technology Conference, Tainan, Taiwan, Aug. 21-22, 2014, p. 73.
    • Pei-Jung Chao, and Yiming Li*, “Impact of Geometry Aspect Ratio on 10-nm Gate-All-Around Silicon-Germanium Nanowire Field Effect Transistors,” IEEE International Conference on Nanotechnology, Toronto, ON, Canada, Aug. 18-21 2014, pp. 452-455.
    • Yiming Li* and Wen-Tsung Huang, “On Characteristic Fluctuation of Nonideal Bulk FinFET Devices,” The 6th IEEE International Nanoelectronics Conference, Sapporo, Japan, July 28-31, 2014, 165(4p).
    • Shintaro Ishii, Akio Higo, Kenichi Yoshikawa, Yosuke Tamura, Takayuki Kiba, Akihiro Murayama, Yiming Li, and Seiji Samukawa, “Quantum energy levels simulation for InGaAs/GaAs Quantum Nanodisks fabricated by Ultimate Top-down Process,” The 6th IEEE International Nanoelectronics Conference, Sapporo, Japan, July 28-31, 2014, INEC0097-MS(4p).
    • Han-Tung Chang, and Yiming Li*, “Random Dopant Fluctuation in 10-nm-Gate Multi-Channel Gate-All-Around Nanowire Field Effect Transistors,” NSTI Nanotechnology Conference Expo., Washington, DC, USA, Jun. 15-18, 2014, vol. 3, pp. 5-8.
    • Ping-Hsun Su, and Yiming Li*, “Design Optimization of 14-nm Bulk FinFET technology via Geometric Programming,” International Workshop on Computational Electronics, Paris, France, Jun. 3-6, 2014, pp. 253-256.
    • Niraj Man Shrestha, Yueh-Chin Lin, Yiming Li*, and Edward Yi Chang, “Device Simulation of P-InAlN-Gate AlGaN/GaN high electron mobility transistor,” International Workshop on Computational Electronics, Paris, France, Jun. 3-6, 2014, pp. 245-248.
    • Niraj Man Shrestha, Yueh-Chin Lin, Han-Tung Chang, Yiming Li*, and Edward Yi Chang, “A Novel Enhancement Mode AlGaN/GaN HEMT with P-InAlN Gate Structure,” The 3rd International Symposium on Next-Generation Electronics, Taoyuan, Taiwan, May 7-10, 2014, p. 104.
    • Chieh-Yang Chen, Cheng-Hao Huang, and Yiming Li*, “Simulation of Multi-Fin Bulk FinFET Devices Induced by Random Discrete Dopant, Interface Trap and Work Function,” The 3rd International Symposium on Next-Generation Electronics, Taoyuan, Taiwan, May 7-10, 2014, p. 105.
    • Wen-Tsung Huang, Cheng-Hao Huang, Pei-Jung Chao, Sheng-Chin Hung, and Yiming Li*, “Random Dopant Fluctuation of Trapezoidal HKMG Bulk FinFET Devices,” The 3rd International Symposium on Next-Generation Electronics, Taoyuan, Taiwan, May 7-10, 2014, p. 126.
    • Sheng-Chia Hsu, Cheng-Hao Huang, Pei-Jung Chao, Sheng-Chin Hung, and Yiming Li*, “Characteristic Fluctuation between N-/P-Type 16-nm-Gate High-κ/Metal Gate Bulk FinFET and Planar MOSFET Devices in the Presence of Random Interface Traps,” International Symposium on Next-Generation Electronics, Taoyuan, Taiwan, May 7-10, 2014, p. 105.
    • Chien-Hsueh Chiang, and Yiming Li*, “A Novel Design of Pull-Down Structure for High-Performance Amorphous Silicon Gate Driver Circuits in Flat Panel Display Industry,” International Symposium on Next-Generation Electronics, Taoyuan, Taiwan, May 7-10, 2014, p. 31.
    • Ping-Hsun Su, and Yiming Li*, “Novel Method and Test Structure for Emerging Bulk FinFETs’ Source-and-Drain Series Resistance Measurement and Extraction,” International Symposium on Next-Generation Electronics, Taoyuan, Taiwan, May 7-10, 2014, p. 53.
    • Seiji Samukawa, Shintaro Ishii, Akio Higo, Yosuke Tamura, Takayuki Kiba, Akihiro Murayama, and Yiming Li, “Full 3D Quantum Energy Level Simulation for GaAs/AlGaAs Quantum Nanodisks Fabricated by Ultimate Top-down Process,” International Symposium on Next-Generation Electronics, Taoyuan, Taiwan, May 7-10, 2014, pp. E1-4.
    • Yu-Yu Chen, Wen-Tsung Huang, Sheng-Chia Hsu, Han-Tung Chang, Chieh-Yang Chen, Chin-Min Yang, Li-Wen Chen, and Yiming Li*, “Statistical Device Simulation of Intrinsic Parameter Fluctuation in 16-nm-Gate N- and P-type Bulk FinFETs,” The 13th IEEE International Conference on Nanotechnology (IEEE NANO 2013), Shangrila Hotel, Beijing, China, August 5-8, 2013.
    • Chien-Hung Chen, Yiming Li*, Chieh-Yang Chen, Yu-Yu Chen, Sheng-Chia Hsu, Wen-Tsung Huang, and Sheng-Yuan Chu, “Experimentally Effective Clean Process to C-V Characteristic Variation Reduction of HKMG MOS Devices,” The 13th IEEE International Conference on Nanotechnology (IEEE NANO 2013), Shangrila Hotel, Beijing, China, August 5-8, 2013.
    • Chieh-Yang Chen, Yiming Li*, Yu-Yu Chen, Han-Tung Chang, Sheng-Chia Hsu, Wen-Tsung Huang, Chin-Min Yang, and Li-Wen Chen, “On Characteristic Variability of 16-nm-Gate Bulk FinFET Devices Induced by Intrinsic Parameter Fluctuation and Process Variation Effect,” Proceedings of 2013 IEEE Device Research Conference (IEEE DRC 2013), The University of Notre Dame, South Bend, IN, June 23-26, 2013, pp.137-138
    • Weiguo Hu, Makoto Igarashi, Ming-Yi Lee, Yiming Li*, and Seiji Samukawa, “50% Efficiency Intermediate Band Solar Cell Design Using Highly Periodical Silicon Nanodisk Array,” The 2012 IEEE International Electron Devices Meeting (IEEE IEDM 2012), San Francisco, CA, Dec. 10-12, 2012, pp. 6.1.1-6.1.4.
    • Yu-Yu Chen, Chieh-Yang Chen, Tony Chiang, and Yiming Li, “Optimal Power Consumption Design of ASG Driver Circuit for 10.1-inch Display Panel Manufacturing,” The 12th International Meeting on Information Display (IMID 2012), EXCO, Daegu, Korea, Aug. 28-31, 2012.
    • Hsin-Wen Su, Yiming Li*, Yu-Yu Chen, Chieh-Yang Chen, and Han-Tung Chang, “Drain-Induced-Barrier Lowering and Subthreshold Swing Fluctuations in 16-nm-Gate Bulk FinFET Devices Induced by Random Discrete Dopants,” Proceedings of 2012 IEEE Device Research Conference (IEEE DRC 2012), The Pannsylvania State University, University Park, PA, USA, June 18-20, 2012, pp.109-110.
    • Yiming Li*, Hui-Wen Cheng, Yung-Yueh Chiu, Chun-Yen Yiu, and Hsin-Wen Su, “A Unified 3D Device Simulation of Random Dopant, Interface Trap and Work Function Fluctuations on High-/Metal Gate Device,” The 2011 IEEE International Electron Devices Meeting Technical Digest (IEEE IEDM 2011), Washington, DC, USA, Dec. 5-7, 2011, pp. 5.5.1-5.5.4.
    • Cheng-Han Shen, I-Hsiu Lo, Po-Jui Lin, and Yiming Li*, “Threshold Voltage Dependence on the Temperature of a-Si:H TFTs and its Implication on Integrated Gate Driver Circuit,” Proceedings of 11th International Meeting on Information Display (IMID 2011), KINTEX, Seoul, Korea, Oct. 11-15, 2011, pp. 245-246.
    • Po-Jui Lin, I-Hsiu Lo, Yiming Li*, and Cheng-Han Shen, “A Novel Amorphous Silicon TFT Gate Driver Circuit with Optimized Design for Integrated Display Panel Manufacturing,” Proceedings of 11th International Meeting on Information Display (IMID 2011), KINTEX, Seoul, Korea, Oct. 11-15, 2011, pp. 78-79.
    • Yung-Yueh Chiu, Yiming Li* and Hui-Wen Cheng, “Random Interface-Traps-Induced Characteristic Fluctuation in 16-nm High-к/Metal Gate CMOS Device and Digital Circuit,” Proceedings of 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan, Sep. 28-30, 2011, pp. 126-127.
    • Yung-Yueh Chiu, Yiming Li* and Hui-Wen Cheng, “Correlation between Interface Traps and Random Dopants in Emerging MOSFETs,” Proceedings of  2011 IEEE International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2011), September 8-10, 2011, Hotel Hankyu Expo Park, Osaka, JAPAN, pp. 291-294.
    • Hui-Wen Cheng, Yiming Li*, Chun-Yen Yiu, and Hsin-Wen Su, “Nanosized Metal Grains Induced Electrical Characteristic Fluctuation in 16 nm Bulk and SOI FinFET Devices with TiN/HfO2 Gate Stack,” Proceedings of  2011 IEEE International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2011), September 8-10, 2011, Hotel Hankyu Expo Park, Osaka, JAPAN, pp. 287-290.
    • Cheng-Han Shen, Yiming Li*, I-Hsiu Lo, Po-Jui Lin, and Sheng-Chuan Chung, “Modeling Temperature and Bias Stress Effect on Threshold Voltage of a-Si:H TFTs for Gate Driver Circuit Simulation,” Proceedings of  2011 IEEE International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2011), September 8-10, 2011, Hotel Hankyu Expo Park, Osaka, JAPAN, pp. 251-254.
    • Hui-Wen Cheng, Yung-Yueh Chiu and Yiming Li*, “Random Interface-Traps-Induced Characteristic Fluctuation in 16-nm High-κ/Metal Gate CMOS Device and SRAM Circuit,” Proceedings of 11th IEEE International Conference on Nanotechnology (IEEE NANO 2011), Portland, Oregon, USA, Aug. 15-18, 2011, pp. 1159-1162.
    • Hui-Wen Cheng, Yung-Yueh Chiu and Yiming Li*, “3D Simulation of Electrical Characteristic Fluctuation Induced by Interface Traps at Si/high-κ Oxide Interface and Random Dopants in 16-nm-Gate CMOS Devices,” Proceedings of 2011 IEEE Device Research Conference (IEEE DRC 2011), Santa Barbara, CA, USA, June 20-22, 2011, pp.103-104.
    • Hui-Wen Cheng, Fu-Hai Li, Ming-Hung Han, Chun-Yen Yiu, Chia-Hui Yu, Kuo-Fu Lee, and Yiming Li*, “3D Device Simulation of Work-Function and Interface Trap Fluctuations on High-k/Metal Gate Devices,” Proceedings of the 2010 IEEE International Electron Devices Meeting (IEEE IEDM 2010), California, USA, Dec. 6-8, 2010, pp. 379-382.
    • I-Hsiu Lo, Yiming Li*, Kuo-Fu Lee, Tony Chiang, Kuen-Yu Huang, and Tsau-Hua Hsieh, “Highly Optimized Electrical Characteristics of a-Si TFT Gate Driver for Display Panel Manufacturing,” Proceedings of International Meeting on Information Display (IMID 2010), Seoul, Korea, Oct. 11-15, 2010, pp. 114-115.
    • Kuo-Fu Lee, Yiming Li*, Chun-Yen Yiu, and Thet-Thet Khaing, “Effective Suppression of Random-Dopant-Induced Characteristic Fluctuation Using Dual Material Gate Technique for 16 nm MOSFET Devices,”Proceedings of 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sep. 22-24, 2010, pp. 697-698.
    • Yiming Li*, Chun-Yen Yiu, Ming-Hung Han and Hui-Wen Cheng, “Nanosized-Metal-Grain-Induced Characteristic Fluctuation in 16-nm CMOS Devices,” Proceedings of 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sep. 22-24, 2010, pp. 305-306.
    • Ying-Chieh Chen and Yiming Li*, “Inverse Doping Profile of MOSFETs via Geometric Programming,” Proceedings of Scientific Computing in Electrical Engineering (SCEE 2010), Toulouse, France, Sep. 19-24, 2010, pp. 95-98.
    • Chia-Hui Yu, Ming-Hung Han, Hui-Wen Cheng, Zhong-Cheng Su, Yiming Li* and Hiroshi Watanabe, “Statistical Simulation of Metal-Gate Work-Function Fluctuation in High-K/Metal-Gate CMOS Devices,” Proceedings of IEEE 15th International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2010), Bologna, Italy, Sep. 6-8, 2010, pp. 153-156.
    • Chun-Yen Yiu, Yiming Li*, Ming-Hung Han, Kuo-Fu Lee, Thet-Thet Khaing, Hui-Wen Cheng, and Zhong-Cheng Su, “Effect of Intrinsic-Parameter Fluctuations on 16-nm-Gate CMOS and Current Mirror Circuit,” Proceedings of The IEEE 10th International Conference on Nanotechnology (IEEE NANO 2010), Seoul, Korea, Aug. 17-20, 2010, pp. 798-801.
    • Hui-Wen Cheng, Yiming Li* and Jung-Yen Yang, “Effects of Shape and Size on Field Enhancement of Au Nanoparticles on SERS-Active Substrates,” Proceedings of The IEEE 10th International Conference on Nanotechnology (IEEE NANO 2010), Seoul, Korea, Aug. 17-20, 2010, pp. 732-735.
    • Hui-Wen Cheng, Hsuan-Ming Huang, Yiming Li*, Tseng-Chien Tsai, Hung-Yu Chen, Kuen-Yu Huang, and Tsau-Hua Hsieh, “An Optimal Design for Power Consumption of 2.2” ~ 2.6” Display System of Mobile Phone,” Proceedings of International Meeting on Information Display (IMID 2009), Kintex, Seoul, Korea, Oct. 12-16, 2009, pp. 968-971.
    • Yao-Jen Lee, Yu-Lun Lu, Fu-Kuo Hsueh, Kuo-Chin Huang, Chia-Chen Wan, Tz-Yen Cheng, Ming-Hung Han, Jeff M. Kowalski, Jeff E. Kowalski, Dawei Heh, Hsi-Ta Chuang, Yiming Li, Tien-Sheng Chao, Ching-Yi Wu, and Fu-Liang Yang, “3D 65nm CMOS with 320°C Microwave Dopant Activation,” 2009 IEEE International Electron Devices Meeting Technical Digest (IEEE IEDM 2009), Baltimore, MD, USA, Dec. 7-9, 2009, pp. 1-4.
    • Tien-Yeh Li, Chih-Hong Hwang, and Yiming Li*, “Random-Dopant-Induced Static Noise Margin Fluctuation and Suppression in 16-nm-Gate CMOS SRAM Cell,” Proceedings of The 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, Oct. 7-9, 2009, pp. 1056-1057.
    • Hui-Wen Cheng, Chih-Hong Hwang, and Yiming Li*, “Characteristic Sensitivity of Multi-Gate and Multi-Fin MOSFETs to Random Dopant Fluctuation and Implication for Digital Circuits,”  Proceedings of The 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, Oct. 7-9, 2009, pp. 812-813.
    • Ming-Hung Han, Chih-Hong Hwang, and Yiming Li*, “Intrinsic-Parameter-Fluctuated Power-Delay Characteristics in 16-nm-Metal-Gate CMOS Devices and Circuit,” Proceedings of The 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, Oct. 7-9, 2009, pp. 404-405.
    • Chih-Hong Hwang, Tien-Yeh Li, Ming-Hung Han, Kuo-Fu Lee, Hui-Wen Cheng, and Yiming Li*, “Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits,” Proceedings of The 2009 IEEE International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2009), Hotel Del Coronado, San Diego, California, USA, Sept. 9-11, 2009, pp.1-4.
    • Kartika Chandra Sahoo, Yiming Li*, Edward Yi Chang, Men-Ku Lin, and Jin-Hua Huang, “Reflectance of Sub-Wavelength Structure on Silicon Nitride for Solar Cell Application,” Proceedings of The 2009 IEEE International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2009), Hotel Del Coronado, San Diego, California, USA, Sept. 9-11, 2009, pp.1-4.
    • Ming-Hung Han, Chih-Hong Hwang, and Yiming Li*, “Effect of Process Variation on 15-nm-Gate Stacked Multichannel Surrounding-Gate Field Effect Transistor,” Proceedings of The 9th IEEE International Conference on Nanotechnology (IEEE-NANO’09), Genoa, Italy, July 26-30, 2009, pp. 264-267.
    • Kartika Chandra Sahoo, Yiming Li*, Men-Ku Lin, Edward Yi Chang, and Jin-Hua Huang, “Design and Fabrication of Sub-Wavelength Structure on Silicon Nitride for Solar Cells,” Proceedings of The 9th IEEE International Conference on Nanotechnology (IEEE-NANO’09), Genoa, Italy, July 26-30, 2009, pp. 109-112.
    • Yiming Li*, Chih-Hong Hwang, Ta-Ching Yeh, and Ming-Hung Han, “Simulation of Electrical Characteristic Fluctuation in 16-nm FinFETs and Circuits,” Proceedings of The IEEE Device Research Conference (IEEE DRC 2009), Penn State University, PA, USA, June 22-24, 2009, pp. 139-140.
    • Hui-Wen Cheng and Yiming Li*, “Enhancement of Field Emission on Surface-Conduction Electron-Emitters,” Proceedings of The Society for Information Display’s Display Week 2009 (SID 2009), Henry B. Gonzalez Convention Center, San Antonio, Texas, USA, May 31-June 5, 2009, pp. 50-53.
    • Ta-Ching Yeh, Hsuan-Ming Huang, and Yiming Li*, “Sensitivity Analysis of Capacitance for a TFT-LCD Pixel,” Accepted by The 7th International Conference on Scientific Computing in Electrical Engineering (SCEE 2008), Helsinki University of Technology, Filand, Sept. 28 - Oct. 3, 2008.
    • Chih-Hong Hwang, Ta-Ching Yeh, Tien-Yeh Li, and Yiming Li*, “Large-Scale Atomistic Circuit-Device Coupled Simulation of Intrinsic Fluctuations in Nanoscale Digital and High-Frequency Integrated Circuits,” Accepted by The 7th International Conference on Scientific Computing in Electrical Engineering (SCEE 2008), Helsinki University of Technology, Filand, Sept. 28 - Oct. 3, 2008
    • Yi-Ting Kuo and Yiming Li*, “A Simulation-Based Genetic Algorithm for Optimal Antenna Pattern Design,” Accepted by The 7th International Conference on Scientific Computing in Electrical Engineering (SCEE 2008), Helsinki University of Technology, Filand, Sept. 28 - Oct. 3, 2008
    • Hui-Wen Cheng and Yiming Li*, “Optimal Configuration of Palladium Hydrogenation Nanogaps for Surface Conduction Electron Emission,” The 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan, Sept. 23-26, 2008, pp. 998-999.
    • Yiming Li*, Chih-Hong Hwang, Ta-Ching Yeh, Hui-Wen Cheng, and Tien-Yeh Li, “Discrete Dopant Fluctuated Transient Behavior in 16-nm-Gate CMOS,” The 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan, Sept. 23-26, 2008, pp. B-10-5.
    • Yiming Li*, Chih-Hong Hwang, Ta-Ching Yeh, and Hsuan-Ming Huang, “Reduction of Discrete-Dopant-Induced High-Frequency Characteristic Fluctuations in Nanoscale CMOS Circuit,” Proceedings of The 2008 IEEE International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2008), Yumoto Fujiya Hotel, Hakone, JAPAN, Sept. 9-11, 2008, pp. 209-212.
    • Yiming Li*, Yi-Ting Kuo, Hsiang-Yu Lo, Hui-Wen Cheng, Ta-Ching Yeh, Mei-Tsao Chiang, and Chi-Neng Mo, “Emission Efficiency Dependence on the Tilted Angle of Nanogaps in Surface Conduction Electron-Emitter,” Proceedings of The 2008 IEEE International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2008), Yumoto Fujiya Hotel, Hakone, JAPAN, Sept. 9-11, 2008, pp. 205-208.
    • Yiming Li*, Chih-Hong Hwang, Yi-Ting Kuo, and Hui-Wen Cheng, “Structure Effect of Cylindrical-Shaped GeSbTe Alloy on Phase Transition in Phase Change Memory,” Proceedings of The 8th IEEE International Conference on Nanotechnology (IEEE-NANO’08), Arlington, Texas, USA, Aug. 18-21, 2008, pp. 350-353.
    • Yiming Li*, Yi-Ting Kuo, Hsiang-Yu Lo, Hui-Wen Cheng, Ta-Ching Yeh, Chih-Hong, Hwang, Mei-Tsao Chiang, and Chi-Neng Mo, “Field Emission Dependence on Nanogap Separation in Surface Conduction Electron-Emitter Display,” Proceedings of The 8th IEEE International Conference on Nanotechnology (IEEE-NANO’08), Arlington, Texas, USA, Aug. 18-21, 2008, pp. 81-84.
    • Hui-Wen Cheng, Ta-Ching Yeh, Yi-Ting Kuo, and Yiming Li*, Chen-Chun Lin and Fu-Ming Pan, Mei-Tsao Chiang, Kuo-Chung Lo, and Chi-Neng Mo, “Morphology Effect on Field Emission Property of Carbon Nanotube Emitters in Triode Structure,” The 2008 International Society for Information Display Symposium, Seminar and Exhibition (SID-08), Los Angeles Convention Center, Los Angeles, California, May 18-23, 2008, pp. 66-69.
    • Chih-Hao Tsai, Fu-Ming Pan, Hsiang-Yu Lo, Yiming Li, Yi-Ting Kuo, Hsueh-Yung (Robert) Chao, Kuo-Chung Lo, Mei-Tsao Chiang, Chi-Neng Mo, “Novel Surface Conduction Electron Emitter (SCE) Nanogaps for Field Emission Displays,” The 2008 International Society for Information Display Symposium, Seminar and Exhibition (SID-08), Los Angeles Convention Center, Los Angeles, California, May 18-23, 2008, pp. 159-162.
    • Yiming Li*, Chih-Hong Hwang, Hsuan-Ming Huang, and Ta-ChingYeh, “Discrete-Dopant-Fluctuated Threshold Voltage Roll-Off in Sub-16nm Bulk FinFETs,” The 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba International Congress Center, Ibaraki, Japan, Sept. 18-21, 2007, pp.880-881.
    • Hsiang-Yu Lo, Yiming Li*, Chih-Hao Tsai, Hsueh-Yung Chao, Fu-Ming Pan, Mei-Chao Chiang, and Chi-Neng Mo, “Experimental and Theoretical Examination of Field Emission in Surface Conduction Electron-Emitter Displays,” The 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba International Congress Center, Ibaraki, Japan, Sept. 18-21, 2007. pp. 544-545.
    • Yiming Li*, Hui-Wen Cheng, Chen-Chun Lin, and Fu-Ming Pan, “Variation of Field Emission Property of Carbon Nanotube Field Emitters in Triode Structure Fabricated with Anodic Aluminum Oxide Templates,” Accepted by The 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba International Congress Center, Ibaraki, Japan, Sept. 18-21, 2007.
    • Yiming Li*, Chih-Hong Hwang, Shao-Ming Yu, and Hsuan-Ming Huang, “Discrete dopant induced electrical and thermal fluctuation in nanoscale SOI FinFET,” The 7th IEEE International Conference on Nanotechnology (IEEE-NANO 07), Hong Kong Convention & Exhibition Centre, Hong Kong, China, Aug. 2-5, 2007. pp. 1166-1169.
    • Yiming Li*, Jung Y. Huang, Bo-Shian Lee, and Chih-Hong Hwang, “Effect of single grain boundary position on surrounding-gate polysilicon thin film transistors,” The 7th IEEE International Conference on Nanotechnology (IEEE-NANO 07), Hong Kong Convention & Exhibition Centre, Hong Kong, China, Aug. 2-5, 2007, pp. 1148-1151.
    • Hsiang-Yu Lo, Yiming Li*, Hsueh-Yung Chao, Chih-Hao Tsai, Fu-Ming Pan, Mei-Chao Chiang, Mai Liu, Ting-Chen Kuo, and Chi-Neng Mo, “Effect of Process Variation on Emission Characteristics in Surface Conduction Electron-Emitter,” The 7th IEEE International Conference on Nanotechnology (IEEE-NANO 07), Hong Kong Convention & Exhibition Centre, Hong Kong, China, Aug. 2-5, 2007, pp.353-356.
    • Fu-Liang Yang, Jiunn-Ren Hwang, Hung-Ming Chen, Jeng-Jung Shen, Shao-Ming Yu, Yiming Li, and Denny D. Tang, “Discrete Dopant Fluctuated 20nm/15nm-Gate Planar CMOS,” Technical Digest of The 2007 Symposium on IEEE VLSI Technology (IEEE VLSI 2007), Kyoto, Japan, June 12-14, 2007, pp.208-209.
    • Hsiang-Yu Lo, Yiming Li*, Hsueh-Yung Chao, Chih-Hao Tsai and Fu-Ming Pan, Ting-Chen Kuo, Mei Liu, and Chi-Neng Mo, “Three-Dimensional Simulation of Novel Surface Conduction Electron-Emitters,” Digest of The 2007 International Society for Information Display Symposium, Seminar and Exhibition (SID 07), Long Beach, California, U.S.A., May 20-25, 2007, pp. 586-589.
    • Chih-Hao Tsai, Kuan-Jung Chen, Fu-Ming Pan, Hsiang-Yu Lo, Yiming Li, Mei Liu, and Chi-Neng Mo, “Nanogap Fabrication on Palladium Electrodes for Field Emission Display Applications,” Digest of The 2007 International Society for Information Display Symposium, Seminar and Exhibition (SID 07), Long Beach, California, U.S.A., May 20-25, 2007, pp. 583-585.
    • Yiming Li* and Shao-Ming Yu, “Random Dopant-Induced Fluctuations of Electrical Characteristics in Nanoscale Single- and Double-Gate MOSFETs,”  Book of Abstract of The 6th International Conference of Scientific Computing in Electrical Engineering (SCEE 2006), Sinaia, Romania, Sept. 17-22, 2006, pp. 154-155.
    • Yiming Li*, “Application of A Unified Optimization Framework to Electronic Designs,” Book of Abstract of The 6th International Conference of Scientific Computing in Electrical Engineering (SCEE 2006), Sinaia, Romania, Sept.17-22, 2006, pp. 86-87.
    • Yiming Li*, Chien-Sung Lu, Wan-Wen Lo, Meng-Jia Tsai, and Tung-Yu Wu,  “Sensitivity Analysis of Static Noise Margin in SRAM Cells with 65 nm CMOS Devices,” Book of Abstract of The 6th International Conference of Scientific Computing in Electrical Engineering (SCEE 2006), Sinaia, Romania, Sept. 17-22, 2006, pp. 21-22.
    • Yiming Li* and Shao-Ming Yu, “Comparison of Threshold Voltage Fluctuations in Sub-45 nm Planar MOSFET and Thin-Buried-Oxide SOI Devices,”The 2006 International Conference on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan, September 12-15, 2006. pp. 370-371.
    • Yiming Li* and Wei-Hsin Chen, “Simulation of Nanoscale Round-Top-Gate Bulk FinFETs with Optimal Geometry Aspect Ratio,” Proceedings of The 6th IEEE Conference on Nanotechnology (IEEE-NANO 06), Cincinnati, Ohio, U.S.A., July 16-20, 2006, pp. 569-572.
    • Yiming Li* and Bo-Shian Lee, “Grain Boundary Effect in Sub-100 nm Surrounding-Gate Polysilicon Thin Film Transistors,” Proceedings of The 6th IEEE Conference on Nanotechnology (IEEE-NANO 06), Cincinnati, Ohio, U.S.A., July 16-20, 2006, pp. 504-507.
    • Yiming Li* and Chien-Sung Lu, “Characteristic Comparison of SRAM Cells with 20 nm Planar MOSFET, Omega FinFET and Nanowire FinFET,” Proceedings of The 6th IEEE Conference on Nanotechnology (IEEE-NANO 06), Cincinnati, Ohio, U.S.A., July 16-20, 2006, pp. 339-342.
    • Yiming Li*, “A Hybrid Intelligent Computational Methodology for Semiconductor Device Equivalent Circuit Model Parameter Extraction,” Presented in The Summer School of Scientific Computing in Electrical Engineering ’05 -- Computational Methods for Microelectronics (SCEE 2005), Capo D'Orlando, Italy, Sept. 5-17, 2005.
    • Yiming Li* and Ying-Shao Chou, “A Novel Statistical Methodology for Sub-100 nm MOSFET Fabrication Optimization and Sensitivity Analysis,” The 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan, Sept. 12-15, 2005, pp.622-623.
    • Yiming Li*, Shao-Ming Yu, and Ching-Feng Hsiao, “Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect Transistors,”The 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan, Sept. 12-15, 2005, pp. 594-595.
    • Yiming Li* and Hung-Mu Chou, “An Intelligent Simulation-Based Optimization Technique for Integrated Circuit Design Automation: A Case Study of LNA Circuit Design,”The 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan, Sept. 12-15, 2005. pp.656-657.
    • Yiming Li*, Hung-Mu Chou, Bo-Shian Lee, Chien-Sung Lu, and Shao-Ming Yu, “Computer Simulation of Germanium Nanowire Field Effect Transistors,” Proceedings of The 2005 IEEE International Conference on Simulation of Semiconductor Processes and Devices (IEEE SISPAD 2005), Komaba Eminence, Tokyo, JAPAN, Sep. 1-3, 2005, pp. 227-230.
    • Hung-Mu Chou and Yiming Li*, “Three-Dimensional Simulation of Nanoscale Copper Interconnects,” Proceedings of The 5th IEEE Conference on Nanotechnology (IEEE-NANO 05), Nagoya Congress Center, Nagoya, Japan, July 11-15, 2005, Vol. 2, pp. 721-724.
    • Yiming Li* and Shao-Ming Yu, “Quantum Correction Simulation of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Metal-Oxide-Semiconductor Structures,” Proceedings of The 5th IEEE Conference on Nanotechnology (IEEE-NANO 05), Nagoya Congress Center, Nagoya, Japan, July 11-15, 2005, Vol. 2, pp. 524-530.
    • Yiming Li*, “Geometry Effect on Magnetic Susceptibility of Vertically Coupled Nanoscale InAs/GaAs Quantum Rings,” Proceedings of The 5th IEEE Conference on Nanotechnology (IEEE-NANO 05), Nagoya Congress Center, Nagoya, Japan, July 11-15, 2005, Vol. 2, pp. 11-14.
    • Yiming Li*, “Transition Energies in Vertically Coupled Multilayer Nanoscale InAs/GaAs Semiconductor Quantum Dots with Different Structure Shapes,” Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials (SSDM 2004), Tokyo, Japan, September 15-17, 2004, pp. 616-617.
    • Yiming Li*, Shao-Ming Yu, and Jam-Wem Lee, “Quantum Mechanical Corrected SPICE Model for Ultrathin Oxide MOSFETs' Gate Tunneling Current Simulation,” Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials (SSDM 2004), Tokyo, Japan, September 15-17, 2004, pp. 738-739.
    • Jam-Wem Lee, Yiming Li*, and H. Tang, “Effective Electrostatic Discharge Protection Circuit Design using Novel Full-Silicided N-MOSFETs in Sub-100 nm era,” Proceedings of The Fourth IEEE Conference on Nanotechnology (IEEE NANO 04), Audimax-TU München, Munich, Germany, August 16-19, 2004, pp. 605-607.
    • Yiming Li*, “Three-Dimensional Calculation of Electronic Structures in Semiconductor Quantum Ring Based Artificial Molecules,” Proceedings of The Fourth IEEE Conference on Nanotechnology (IEEE NANO 04), Audimax-TU München, Munich, Germany, August 16-19, 2004, pp. 474-476.
    • Chien-Shao Tang, Shao-Ming Yu, Hong-Mu Chou, Jam-Wem Lee, and Yiming Li*, “Simulation of Electrical Characteristics of Surrounding- and Omega-Shaped-Gate Nanowire FinFETs,” Proceedings of The Fourth IEEE Conference on Nanotechnology (IEEE NANO 04), Audimax-TU München, Munich, Germany, August 16-19, 2004, pp. 281-283.
    • Fu-Liang Yang, Di-Hong Lee, Hou-Yu Chen, Chang-Yun Chang, Sheng-Da Liu, Cheng-Chuan Huang, Tang-Xuan Chung, Hung-Wei Chen, Chien-Chao Huang, Yee-Chia Yeo, Yiming Li, Jam-Wem Lee, and Pu Chen, Mong-Song Liang, and Chenming Hu, “5nm-Gate Nanowire FinFET," The 2004 Symposium on VLSI Technology (IEEE VLSI 2004), Honolulu, Hawaii, USA, June 15-19, 2004, pp. 196-197.
    • Yiming Li* and Yen-Yu Cho, “Intelligent BSIM4 Model Parameter Extraction for Sub-100 nm MOSFETs era," Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials (SSDM 2003), Tokyo, Japan, Sep. 16-18, 2003, pp. 712-713.
    • Yiming Li* and Hsiao-Mei Lu, “Investigation of Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings," Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials (SSDM 2003), Tokyo, Japan, Sep. 16-18, 2003, pp. 322-323.
    • Jam-Wem Lee, Alice Chao, Yiming Li*, and Howard Tang, “A Study of ESD Protection under Pad Design for Copper-Low K VLSI Circuits," Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials (SSDM 2003), Tokyo, Japan, Sep. 16-18, 2003, pp. 672-673.
    • Yiming Li* and Hsiao-Mei Lu, “Electron Energy State Spin-Splitting in Nanoscale InAs/GaAs Semiconductor Quantum Dots and Rings," Proceedings of the 2003 Third IEEE Conference on Nanotechnology (IEEE-NANO 03), San Francisco, CA, Aug. 12-14, 2003, Vol. 2, pp. 885-888.
    • Jam-Wem Lee and Yiming Li, “A Robust Design for Fully-Silicided Electrostatic Discharge Protection Devices in Sub-100 nm CMOS Circuit era," Proceedings of the 2003 Third IEEE Conference on Nanotechnology (IEEE-NANO 03), San Francisco, CA, Aug. 12-14, 2003, Vol. 2, pp. 639-642.
    • Yiming Li* and Hsiao-Mei Lu, “Electronic Structure of Vertically Coupled Multi-Layers Semiconductor Quantum Dots in a Magnetic Field," Proceedings of the 2003 Third IEEE Conference on Nanotechnology (IEEE-NANO 03), San Francisco, CA, Aug. 12-14, 2003, Vol. 2, pp. 99-102.
    • Yiming Li*, Shao-Ming Yu, Chien-Shao Tang, and Tien-Sheng Chao, “Comparison of Quantum Correction Models for Ultratin Oxide Single- and Double-Gate MOS Structures Under the Inversion Conditions," Proceedings of the 2003 Third IEEE Conference on Nanotechnology (IEEE-NANO 03), San Francisco, CA, Aug. 12-14, 2003, Vol. 2, pp. 36-39.
    • Yiming Li*, Hsiao-Mei Lu, and Oleksandr Voskoboynikov, “Geometric Variations and Magnetic Field Effects on Electron Energy States and Magnetization of InAs/GaAs Quantum Rings,"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM 2002), Nagoya Congress Center, Nagoya, Japan, 17-19 Sep., 2002, pp. 574-575.
    • Yiming Li*, Yen-Yu Cho, Chuan-Sheng Wang, and Kuen-Yu Huang, “A Genetic Algorithm Approach to InGaP/GaAs HBT Parameters Extraction and RF Characterizations," Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM 2002), Nagoya Congress Center, Nagoya, Japan, 17-19 Sep., 2002, pp. 640-641.
    • Yiming Li*, Jam-Wem Lee, and Simon M. Sze, “An Optimization of the Anti-punchthrough Implant for ESD Protection Circuit Design," Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM 2002), Nagoya Congress Center, Nagoya, Japan, 17-19 Sep., 2002, pp. 394-395.
    • Horng-Chih Lin, Meng-Fan Wang, Fu-Ju Hou, Jan-Tsai Liu, Yiming Li*, Tiao-Yuan Huang, and Simon M. Sze, “Effects of Sub-gate Bias on the Operation of Schottky-Barrier SOI MOSFETs Having Nano-scale Channel," Proceedings 2002 the 2nd IEEE Conference on Nanotechnology (IEEE-NANO 02), Hilton Crystal City at National Airport, Arlington, VA, USA, 26-28 Aug., 2002, pp. 205-208.
    • Yiming Li*, Hsiao-Mei Lu, Oleksandr Voskoboynikov, Chien-Ping Lee, and Simon M. Sze, “Energy Structure and Magnetization Effect of Semiconductor Quantum Rings," Proceedings 2002 the 2nd IEEE Conference on Nanotechnology (IEEE-NANO 02), Hilton Crystal City at National Airport, Arlington, VA, USA, 26-28 Aug., 2002, pp. 67-70.
    • Yiming Li* and Chuan-Sheng Wang, “A Time Domain Approach to High Frequency Circuit Simulation," Book of Reviewed Abstracts of Scientific Computing in Electrical Engineering 2002 Conference (SCEE 2002), Eindhoven, The Netherlands, 23-28 June, 2002, pp. 199-200.
    • Yiming Li*, Oleksandr Voskoboynikov, Chien-Ping Lee, Cheng-Feng Shih, Simon M. Sze, and Oleg Tretyak, “Magnetic field dependence of electron energy states in 3D nano-scopic quantum rings," Proceedings of 2001 The 1st IEEE Conference on Nanotechnology (IEEE-NANO 01), Hawaii, 28-30 Oct., 2001, pp. 11-16.
    • Yiming Li*, Oleksandr Voskoboynikov, Chien-Ping Lee, Simon M. Sze, and Oleg Tretyak, “Effect of Shape and Size on Electron Transition Energies of InAs Semiconductor Quantum Dots," Extended Abstract of 2001 International Conference on Solid State Devices and Materials (SSDM 2001), Tokyo, Sep. 2001, pp. 654-655.

  • 專書章節
    • Yiming Li, Oleksandr Voskoboynikov, Chien-Ping Lee, and Simon M. Sze, "A Nonlinear Iterative Method for InAs/GaAs Semiconductor Quantum Dots Simulation", in “Simulation of Semiconductor Processes and Devices 2001” Edited by D. Tsoukalas and C. Tsamis, Springer-Verlag Wien, ISBN: 3-211-83708-6, Austria, Sep. 2001, pp. 324-327.
    • Yiming Li, Chuen-Tsat Sun, and, Cheng-Kai Chen, "A Floating-Point Based Evolutionary Algorithm for Model Parameters Extraction and Optimization in HBT Device Simulation", in “Advances in Soft Computing – Neural Networks and Soft Computing,” Edited by L. Rutkowski and J. Kacprzyk, Physica-Verlag, ISBN 3-7908-0005-8, Jan. 2003, pp. 364-369
    • Yiming Li, Jam-Wem Lee, and Hong-Mu Chou, "Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors", in “Simulation of Semiconductor Processes and Devices 2004” Edited by G. Wachutka and G. Schrag, Springer-Verlag Wien, ISBN: 3-211-22468-8, Sep. 2004, pp. 307-310
    • Yiming Li, Cheng-Kai Chen, and Shao-Ming Yu, "A Two-Dimensional Thin-Film Transistor Simulation Using Adaptive Computing Algorithm", in “Lecture Series on Computer and Computational Sciences I” Edited by T. Simos and G. Maroulis, Brill Academic Publishers, ISBN: 90-6764-418-8, Boston, November 2004, pp. 586-588.

  • 專　　利
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