專任教師
 
孟慶宗
孟慶宗
教授
組   別:
電波組
辦 公 室:
ED928
電   話:
03-5712121ext54607
信   箱:
ccmeng@nycu.edu.tw
網   站:
研究 主題:
射頻電路設計
  • 個人簡歷
    孟慶宗,孟慶宗於1985年在國立台灣大學獲得了電機工程學習的學士學位。他也於1992年在加利福尼亚大学洛杉矶分校獲得了電機工程學系的博士學位。他在博士研究中展示了多量子阱IMPATT振盪器在100 GHz的首次連續波操作。
    在完成博士學位後,他於1993年加入了位於加利福尼亞州聖塔克拉拉的惠普(Hewlett Packard)元件集團,擔任技術人員。他的研究和開發領域包括用於微波和射頻功率放大器應用的HBT、MESFET和PHEMT。他現在是國立交通大學電信工程學系的副教授。他目前的研究興趣包括了無線射頻集成電路(RFIC)、高頻電路和高速器件。

    Personal Information:
    o NYCU Academic Hub: https://scholar.nycu.edu.tw/zh/persons/chin-chun-meng

  • 經歷與榮譽
    • 校外榮譽事項    2011    指導學生蘇珍儀、魏宏儒、吳柏誼、黃國威榮獲Millimeter Wave Integration Technologies Third Prize for the Best Paper Award     IEEE MTT-S International MicrowaveWorkshop Series
      校外榮譽事項    2008    指導學生曾聖哲榮獲財團法人聯發科技教育基金會「聯發科技獎金」    財團法人聯發科技教育基金會

  • 研究主題
    • 微電工程
    • 微波工程
    • 電信工程

  • 期刊論文
    • Wei, Hung-Ju; Meng, Chinchun; Wang, Ta-Wei; Lo, Tai-Lin; Wang, and Chia-Ling "60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 mu m Foundry CMOS Technology", Volume: 60   Issue: 6   Pages: 1684-1698   DOI: 10.1109/TMTT.2012.2189412   Part: Part 1   Published: JUN 2012  
    • Syu, Jin-Siang; Meng, Chinchun, "Low-Power Sub-Harmonic Direct-Conversion Receiver With Tunable RF LNA and Wideband LO Generator at U-NII Bands", Volume: 60   Issue: 3   Pages: 555-566   DOI: 10.1109/TMTT.2011.2182657   Part: Part 1   Published: MAR 2012
    • Syu, Jin-Siang; Lu, Hsi-Liang; Meng, Chinchun "A 0.6-V 30 GHz CMOS Quadrature VCO Using Microwave 1:1:1 Trifilar Transformer", Volume: 22   Issue: 2   Pages: 88-90   DOI: 10.1109/LMWC.2011.2180369   Published: FEB 2012
    • J. -S. Syu and C. Meng, "15 GHz High-isolation sub-harmonic mixer with delay compensation," IEEE Microwave and Wireless Components Letters, vol. 19, no. 12, pp. 810-812, Dec. 2009, doi: 10.1109/LMWC.2009.2033522.
    • T.-H. Wu, J.-S. Syu, and C. C. Meng, “Analysis and design of the 0.13 um CMOS shunt-series series-shunt dual feedback amplifier,” in IEEE Transactions Circuits Syst. I, Reg. Papers, vol. 56, no. 11, pp. 2373-2383, Nov. 2009
    • Jen-Yi Su, Chinchun Meng, Po-Yi Wu and Guo-Wei Huang, Nov. 2009, “0.13-μm CMOS Q-Band Leveled-LO Subharmonic Mixer with Injection-Locked Frequency-Divider Quadrature Generator”, Microwave and optical technology letters, Vol. 51, No. 11, pp. 2663-2665. (SCI) NSC 95-2221-E-009-043-MY3.
    • Jin-Siang Syu, Chinchun Meng, Ying-Chieh Yen and Guo-Wei Huang, July 2009, “Gilbert Upconversion Mixers Using Single-Band/Dual-Band LC Current Combiners” Microwave and optical technology letters, Vol. 51, No. 7, pp. 1718-1722. (SCI) NSC 95-2221-E-009-043-MY3.
    • Jin-Siang Syu, Chinchun Meng and Ya-Hui Teng, June 2009, “10-GHz Dual-Conversion Low-IF Downconverter With Microwave and Analog Quadrature Generators”, Electronics Letters, Vol. 45, No. 13, pp. 685-686 (SCI) NSC 95-2221-E-009-043-MY3.
    • Jen-Yi Su, Chinchun Meng, and Po-Yi Wu, June 2009, “Q-Band pHEMT and mHEMT Subharmonic Gilbert Upconversion Mixers,” IEEE Microwave and Wireless Components Letters, vol. 19, no. 6, pp. 392-394. (SCI) NSC 95-2221-E-009-043-MY3
    • J.-Y. Su, S.-C. Tseng, C. C. Meng, P.-Y. Wu, Y.-T. Lee, and G.-W. Huang, “Ka/Ku-band PHEMT Gilbert mixers with polyphase and coupled-line quadrature generators,” in IEEE Transactions Microw. Theory Tech., Vol. 57, No. 5, pp. 1063-1073, May 2009
    • Jin-Siang Syu, Chinchun Meng and Ya-Hui Teng, May 2009, “UWB Gilbert Downconverter Utilizing a Wideband LR-CR Quadrature Generator,” Electronics Letters, Vol. 45, No. 10, pp. 514-515, (SCI) NSC 95-2221-E-009-043-MY3.
    • C. C. Meng, H. J. Wei, and P. H. Sun, March 2009, “Criteria for the Evaluation of Linear Two-Port Stability Using Two Geometrically Derived Parameters”, International Journal of Microwave and Wireless Technologies, vol. 1, pp. 65-72. (SCI) NSC 95-2221-E-009-043-MY3.
    • C. C. Meng, T.-H. Wu, J.-S. Syu, S.-W. Yu, K.-C. Tsung, and Y.-H. Teng, “2.4/5.7-GHz CMOS dual-band low-if architecture using weaver-hartley image-rejection techniques”, in IEEE Transactions Microw. Theory Tech., Vol. 57, No. 3, pp. 552-561, March 2009
    • S.-C. Tseng, C. C. Meng, H.-Y. Liao, Y.-C. Lin, and Y.-H. Teng, January 2009, “Interconnection Loss from Substrate Effects on LNA Performance and Design Accuracy”, Microwave and optical technology letters, Vol. 51, No. 1, pp. 144-146. (SCI) NSC 95-2221-E-009-043-MY3.
    • Chinchun Meng, Ya-Hui Teng, Jin-Siang Syu, Yi-Chen Lin, Jhin-Ci Jhong and Ying-Chieh Yen, Nov. 2008, “Characteristics of GaAs Transformers for RFIC Applications”, Microwave and optical technology letters, Vol. 50, No. 11, pp. 2937-2942.. (SCI) NSC 95-2221-E-009-043-MY3.
    • Hung-Ju Wei, Chinchun Meng, YuWen Chang, and Guo-Wei Huang, Oct 2008, “11.8 GHz GaInP/GaAs HBT Dynamic Frequency Divider using HLO-FF Technique”, Microwave and optical technology letters, Vol. 50, No. 10, pp. 2642-2645. (SCI) NSC 95-2221-E-009-043-MY3.
    • Jin-Siang Syu, Chinchun Meng, Chih-Kai Wu and Guo-Wei Huang, September 2008, “Comparison of Wideband Gilbert Micromixers Using SiGe HBT and GaInP/GaAs HBT Technologies”, Microwave and optical technology letters, Vol. 50, No. 9, pp. 2254-2257. (SCI) NSC 95-2221-E-009-043-MY3.
    • S.-C. Tseng, C. Meng, C.-H. Chang, S.-H. Chang, and G.-W. Huang, "A silicon monolithic phase-inverter rat-race coupler using spiral coplanar striplines and its application in a broadband Gilbert mixer," in IEEE Transactions on Microwave Theory and Techniques, vol. 56, no. 8, pp. 1879-1888, Aug. 2008, doi: 10.1109/TMTT.2008.927312.
    • S.-C. Tseng, C. Meng and Y.-T. Lee, "Dual-band adjustable and reactive i/q generator with constant resistance for down- and up-converters," in IEEE Transactions on Microwave Theory and Techniques, vol. 56, no. 8, pp. 1861-1868, Aug. 2008, doi: 10.1109/TMTT.2008.926526.
    • Jin -Siang Syu, Chinchun Meng, and Sheng-Wen Yu, July 2008, “A Broadband SiGe HBT Gilbert Downconverter with a 1.8-to-36 GHz Integrated Dual Marchand Balun”, Electronics Letters, Vol. 44, No. 14, pp. 861-863, (SCI) NSC 95-2221-E-009-043-MY3.
    • Tzung-Han Wu, Yi-Chen Lin, Chinchun Meng, Tse-Hung Wu, Hung-Ju Wei, and Guo-Wei Huang, July 2008, “A fully single-ended GaInP/GaAs HBT micromixer using an integrated active LO balun”, Microwave and optical technology letters, Vol. 50, No. 7, pp. 1918-1921. (SCI) NSC 95-2221-E-009-043-MY3.
    • Hung-Ju Wei, Chinchun Meng, YuWen Chang, Yi-Chen Lin, and Guo-Wei Huang, June 2008, “High-Speed Divide-by-4/5 Prescalers with Merged and Gates Using GaInP/GaAs HBT and SiGe HBT Technologies”, Microwave and optical technology letters, Vol. 50, No. 6, pp. 1498-1500. (SCI) NSC 95-2221-E-009-043-MY3.
    • J.-S. Syu, C. Meng, K.-C. Tsung and G.-W. Huang, April 2008, “5 GHz quadrature voltage-controlled oscillator using trifilar transformers ”, Electronics Letters, Vol. 44 No. 9, pp. 562-562 (SCI) NSC 95-2221-E-009-043-MY3.
    • Chinchun Meng, and Tzung-Han Wu, Feb. 2008, “5-GHz RFIC Single Chip Solution in GaInP/GaAs HBT Technology”, Microwave Journal, pp. 132-142. (SCI) NSC 95-2221-E-009-043-MY3.
    • Sheng-Che Tseng, Chinchun Meng, and Guo-Wei Huang, Feb. 2008, “Seven GHz High Gain 0.18um CMOS Gilbert Downconverter With Wide-Swing Cascode Current Mirrors ”, Microwave and Optical Technology Letters, vol. 50, No. 2, pp. 435-437. (SCI) NSC 95-2221-E-009-043-MY3.
    • Hung-Ju Wei, Chinchun Meng, YuWen Chang, and Guo-Wei Huang, Feb. 2008, “Comparison of GaInP/GaAs HBT RFDs With Resistive Load and Shunt-Shunt Feedback Active Load”, Microwave and Optical Technology Letters, vol. 50, No. 2, pp. 433-435. (SCI) NSC 95-2221-E-009-043-MY3.
    • Jen-Yi Su, Chinchun Meng, and Yueh-Ting Lee, Feb. 2008, “Compact CPW-MS-CPW Two-Stage pHEMT Amplifier Compatible With Flip Chip Technique in V-Band Frequencies” , IEEE Microwave and Wireless Component Letters, vol. 18, no. 2, pp. 112-114.. (SCI) NSC 95-2221-E-009-043-MY3.
    • Jin-Siang Syu, Chinchun Meng, and Ying-Chieh Yen, Feb. 2008, “5.7 GHz Gilbert I/Q Downconverter Integrated With a Passive LO Quadrature Generator and an RF Marchand Balun”, IEEE Microwave and Wireless Components Letters, vol. 18, no. 2, pp. 127-129. (SCI) NSC 95-2221-E-009-043-MY3.
    • S.-C. Tseng, C.C. Meng, and C.-K. Wu, January 2008, “GaInP/GaAs HBT Wideband Transformer Gilbert Downconverter With Low Voltage Supply” ,Electronics Letters, vol. 44, No. 2, pp.127-128. (SCI) NSC 95-2221-E-009-043-MY3.
    • Tzung-Han Wu, Chinchun Meng, and Guo-Wei Huang, January 2008, “GaInP/GaAs HBT Broadband Inductorless Receiver”, Microwave and Optical Technology Letters, vol. 50, no. 1, pp. 247-250. (SCI) NSC 95-2221-E-009-043-MY3.
    • Hung-Ju Wei, Chinchun Meng, Po-Yi Wu, and Kuan-Chang Tsung, January 2008, “K-Band CMOS Sub-Harmonic Resistive Mixer With a Miniature Marchand Balun on Lossy Silicon Substrate”, IEEE Microwave and Wireless Components Letters, vol. 18, no. 1, pp. 40-42. (SCI) NSC 95-2221-E-009-043-MY3.
    • J. S. Syu and C. C. Meng, Dec 2007, “2.4/5.7 GHz Dual-Band High Linearity Gilbert Upconverter Utilizing Bias-Offset TCA and LC Current Combiner” ,IEEE Microwave and Wireless Components Letters, vol. 17, no. 12, pp.876-878. (SCI) NSC 95-2221-E-009-043-MY3.
    • Hung-Ju Wei, Chinchun Meng, YuWen Chang, and Guo-Wei Huang, Oct 2007, “Injection-Locked GaInP/GaAs HBT Frequency Divider With Stacked transformers”, Microwave and Optical Technology Letters, vol. 49, no.10, pp. 2602-2605. (SCI) NSC 95-2221-E-009-043-MY3.
    • Hung-Ju Wei, Chinchun Meng, and Yu-Wen Chang, September 2007,“A Wide-Ratio Broadband SiGe HBT Regenerative Frequency Divider Enhanced by a Differential TIA Load”, Electronics Letters, vol. 43, No. 19, pp. 1021-1022, (SCI) NSC 95-2221-E-009-043-MY3.
    • S. C. Tseng, C. C. Meng, and G. W. Huang, Aug. 2007, “SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using Lumped-Element Rat-Race Couplers ”, Microwave and Optical Technology Letters, vol. 49, no.8, pp. 2018-2020. (SCI) NSC 95-2221-E-009-043-MY3.
    • H. J. Wei, C. C. Meng, Y. W. Chang and G. W. Huang, June 2007, “9.5 GHz GaInP/GaAs HBT divide-by-two frequency divider using super-dynamic D-type flip-flop technique” ,Electronics Letters, vol. 43, No. 13, pp. 706-707, (SCI) NSC 95-2221-E-009-043-MY3.
    • T.-H. Wu, S.-C. Tseng, C. -C. Meng and G. -W. Huang, "GaInP/GaAs HBT sub-harmonic Gilbert mixers using stacked-LO and leveled-LO topologies," in IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 5, pp. 880-889, May 2007, doi: 10.1109/TMTT.2007.895169.
    • Tzung-Han Wu and Chinchun Meng, “10-GHz Highly Symmetrical Sub-Harmonic Gilbert Mixer Using GaInP/GaAs HBT Technology”, in IEEE Microwave and Wireless Components Letters, vol. 17, no. 5, pp. 370-372, May 2007
    • Tzung-Han Wu, Chinchun Meng, and Guo-Wei Huang, May 2007, “High-gain high-isolation CMFB stacked-LO subharmonic Gilbert mixer using SiGe BiCMOS technology”, Microwave and Optical Technology Letters, vol. 49, no.5, pp. 1214-1216. (SCI) NSC 95-2221-E-009-043-MY3.
    • S. C. Tseng, C. C. Meng, Y. W. Chang, and G. W. Huang, April 2007, “C-Band Fully Integrated SiGe HBT Superharmonic QVCO” ,Microwave and Optical Technology Letters, vol. 49, no.4, pp. 867-869. (SCI) NSC 95-2221-E-009-043-MY3.
    • Chinchun Meng, Tzung-Han Wu, Tse-Hung Wu, and Guo-Wei Huang, Feb. 2007, “5.2 GHz High Isolation SiGe BiCMOS CMFB Gilbert Mixer”, Microwave and Optical Technology Letters, vol. 49, no. 2, pp. 450-451. (SCI) NSC 94–2219-E-009–014.
    • C. Meng, J. Y. Su, B. C. Tsou, and G. W. Huang, "The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices", IEICE Transactions ELECTRON, Vol. E89-C, No. 4 , pp. 520-523
    • S. C. Tseng, C. Meng, Y. H. Li and G. W. Huang, "The Port-to-Port Isolation of the Downconversion P-type Micromixer Using Different N-well Topologies", IEICE Transactions ELECTRON, Vol. E89-C, No. 4 , pp. 482-487
    • S.-C. Tseng, C. Meng, W.-Y. Chen, and J.-Y. Su, "A Modified HICUM Model for GaInP/GaAs HBT Device", Microwave and optical technology letters, Vol.48,No.4,pp.780-783
    • C. Meng and W. Wang, "High Linear Power MESFET Devices Using Source Degeneration Inductance and Input Impedance Mismatch", Microwave and optical technology letters, Vol. 48,No.5,pp.953-954
    • S. C. Tseng, C. Meng, W. Y. Chen, "True 50% Duty-Cycle SSH and SHH SiGe BiCMOS Divide-by-3 Prescalers", IEICE TRANS. ELECTRON, Vol. E89-C , No. 6, pp. 725-731
    • C. Meng, Y. W. Chang, and S. C. Tsen, "4.9 GHz low-phase-noise transformer-based superharmonic-coupled GaInP/GaAs HBT QVCO", IEEE microwave and wireless components letters, vol. 16, no. 6, pp. 339-341
    • T. H. Wu, C. Meng and T. H. Wu, "5.2-GHz SiGe HBT Upconverter Using Active-Inductor LC Current Mirror", Electronics Letters, Vol. 42, No. 15, pp. 859-860.
    • C. Meng and J. C. Jhong, "5.2 GHz GaInP/GaAs HBT Cascode LNA With 5.5 dB Gain Enhancement Using Inter-Stage LC Matching", Microwave and optical technology letters, Vol. 48, No. 8, pp.1499-1501
    • T. H. Wu, C. Meng, T. H. Wu, and G. W. Huang, "A Monolithic SiGe Heterojunction Bipolar Transistor Gilbert Upconverter with Inductor-Capacitor Current Mirror Load and Lumped-Element Rat-Race Balun", Japanese J. of Applied Physics, Vol. 45, No. 8A, pp. 6236-6244 
    • J. Y. Su, C. Meng, Y. H. Li, S. C. Tseng and G. W. Huang, "Gain Enhancement Techniques for CMOS LNA and Mixer", Microwave and optical technology letters, Vol. 48, No. 10, pp. 2067-2070
    • S. C. Tseng, C. Meng, S. Y. Li, J. Y. Su and G.W. Huang, "Single-Ended Frequency Divider with Moduli of 256~271", Microwave and optical technology letters, Vol. 48, No. 10, pp. 2096-2100
    • S. C. Tseng, C. Meng and G.W. Huang, "A 2.4 GHz, 5.2 GHz and 5.7 GHz CMFB Gilbert Downconverter with Low Voltage Cascode Current Mirror Input Stage", Microwave and optical technology letters, Vol. 48, No. 10, pp. 2345-2349
    • T. H. Wu and C. Meng, "5.2/5.7GHz 48dB Image Rejection GaInP/GaAs HBT Weaver Down-Converter Using LO Frequency Quadruple", IEEE Journal of solid-state circuits, Vol. 41, No. 11, pp.2468-2480
    • S.-C. Tseng, C. Meng, C.-H. Chang, C.-K. Wu and G.-W. Huang, "monolithic broadband Gilbert micromixer with an integrated marchand balun using standard silicon IC process," in IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 12, pp. 4362-4371, Dec. 2006, doi: 10.1109/TMTT.2006.884690.
    • T. H. Wu and C. Meng, "10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells", IEICE Transactions Fundamentals
    • T. H. Wu, C. Meng, T. H. Wu, and G. W. Huang, "A 5.2 GHz 47 dB Image Rejection Double Quadrature Gilbert Downconverter Using 0.35 um SiGe HBT Technology", IEICE Transactions Fundamentals
    • C. Meng and J.C. Jhong, Feb. 2007, "4-GHz Inter-Stage-Matched SiGe HBT LNA with Gain Enhancement and No Noise Figure Degradation", IEICE TransactionsFundamentals
    • S. S. Lu. Y. W. Hsu, C. Meng and L. P. Chen, "Single-voltage-supply operation of Ga0.51In0.49P/In0.15Ga0.85As insulated-gate FET`s for power application", IEEE electron device letters, Vol. 20, No. 1. pp.21-23. 
    • S.-S. Lu, C. Meng, T.-W. Chen, and H.-C. Chen, "A novel interpretation of transistor S parameters by poles and zeros for RF IC circuit design", in IEEE Transactions on microwave theory and techniques, Vol. 49, No.2, pp.406-409, Feb. 2001
    • C. Meng, K. L. Deng, H. D. Lee, S. S. Lu and H. Wang, "10 GHz GaAs monolithic twin dipole antenna FET mixer", Microwave and optical technology letters, Vol. 30, No. 1, pp. 44-46. NSC 89-2219-E-005-004.
    • C. Meng, G. R. Liao and J. W. Chen, "Analysis of Millimeter-wave GaN IMPATT oscillator at elevated temperature", Microwave and optical technology letters, Vol. 23, No. 4, pp. 257-259. NSC 88-2219-E-005-003.
    • E.-Y. Chang, C.-S. Fuh, C. Meng, K.-B. Wang, and S.-H. Chen, "A planar gate double beryllium implanted GaAs power MESFET for low voltage digital wireless communication application", in IEEE Transactions on electron devices, Vol. 47, No.6, pp. 1134-1138.
    • C. Meng, and G. Liao, "Analysis of SiC IMPATT device in millimeter-wave frequency”, Microwave and optical technology letters", Vol. 18, No. 3, pp.167-168, NSC-87-2213-E-005- 019.
    • S.-S. Lu, C. Meng, Y.-S. Lin, and H. Lan, "The effect of gate recess profile on device performance of Ga0.51In0.49P/In0.2Ga0.8As doped-channel FETs", in IEEE Transactions on electron devices, Vol. 46, No. 1. pp. 48-54 NSC 88-2219-E-002-009
    • C. Meng and G. R. Liao, "Performance of millimeter-wave GaInP IMPATT device at elevated temperature", Microwave and optical technology letters, Vol. 20, No. 6. pp. 422-424. NSC 88-2219-E-005-003.
    • C. Meng and W. Wang, "A Watt level 2.3 GHz GaAs MESFET power amplifier with gap-coupled microstrip lines matching topology", Microwave and optical technology letters, Vol. 41, No. 5, pp. 346-348. (EI) NSC 92-2219-E-009-023
    • C. Meng, T. H. Wu and S. S. Lu, "DC to 6-GHz high gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter capacitive peaking", microwave and optical technology letters, Vol. 43, No. 1, pp.67-69 (EI) NSC 92-2219-E-009-023
    • S. S. Lu, and C. Meng, F. Williamson, M. I. Nathan, "Uniaxial stress effects on the AlAs/GaAs double barrier heterostructures", J. Appl. Phys., Vol. 69, No 12, pp.8241-8246
    • C. Meng, H. R. Fetterman, "A theoretical analysis of millimeter-wave GaAs/AlGaAs multiquantum well transit time devices by the lucky drift model", Solid-State Electronics, Vol. 36, No. 3, pp. 435-442. 
    • C. Meng, S. W. Siao, H. R. Fetterman, D. C. Streit, T. R. Block and Y. Saito, "100 GHz CW GaAs/AlGaAs multiquantum well IMPATT oscillators", Microwave and optical technology letters, Vol. 10, No.1 , pp. 4-6.
    • Y. J. Wang and C. Meng, "Optimal design of p-buffer layer for GaAs power MESFET", Electronics Letters, Vol.32 No.24, pp. 2282-2283.
    • S.-S. Lu, C. Meng, T.-W. Chen, and H.-C. Chen, "The origin of the kink phenomenon of transistor scattering parameter S22", in IEEE Transactions on microwave theory and techniques, vol. 49, no.2, pp.333-340, Feb. 2001
    • S.-S. Lu, Y.-S. Lin, H.-W. Chiu, Y.-C. Chen, and C. Meng, "The determination of S-Parameters from the poles of voltage-gain transfer function for RF IC design,", in IEEE Transactions on circuits and systems_I: regular papers, vol. 52, no. 1, pp. 191-199, Jan. 2005
    • H. C. Chen, C. Meng and S. S. Lu, "2.4 GHz CMOS double balanced Gilbert Cell Micromixer", Microwave and optical technology letters, Vol. 28, No. 4, pp. 251-253. NSC89-2213-E-005-053.
    • C. Meng, J. W. Chen and S. J. Liu, "Ion-implanted planar-gate GaAs MESFET optimized for single-voltage-supply operation", Microwave and optical technology letters, Vol. 30, No. 1, pp. 44-46. NSC89-2213-E-005-053.
    • C. Meng, G. R. Liao and S. S. Lu, "Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer", Electronics Letters, Vol. 37 No. 16, pp 1045-1046. NSC 89-2219-E-005-004.
    • S. S. Lu, M. I. Nathan and C. Meng, "Uniaxial stress dependence of the current-voltage characteristics of n-type AlAs/GaAs/AlAs resonant tunneling diodes at 77 k", J. Appl. Phys., Vol. 69. 1., pp.525-527
    • H.Y. Pan, H. Y. Tu, S. S. Lu and C. Meng, "A novel interpretation of transistor transducer power gain by optical analogy", Microwave and optical technology letters, Vol. 31, No. 2, pp. 124-126. NSC89-2219-E-005-004
    • C. Meng, B. C. Tsou, and S.C. Tseng, "Determining GaInP/GaAs HBT device structure by DC measurements on a two-emitter HBT device and high frequency transit time measurements", IEICE Trans. Electron, Vol. E88-C, No. 6, pp. 1127-1132. (EI) NSC 93-2219-E-009-026
    • T. H. Wu, C. Meng, T. H. Wu, and G. W. Huang, "A 5.7GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 um SiGe HBT Technology", IEICE Trans. Electron, Vol. E88-C, No.6, pp. 1267-1270. (EI) NSC 93-2219-E-009-026
    • D. S. Pan and C. Meng, "On the mechanism and frequency limit of double-barrier quantum-well oscillators", J. Appl. Phys. 61, 2082 1.
    • C. Meng and M. H. Chiang, "Design and realization of 2.4 GHz source inductance degeneration CMOS low noise amplifier precisely", Journal of engineering, National Chung-Hsing University, Vol. 12, No. 3, pp. 197-202. 
    • S. A. Yu, C. Meng, and S. S. Lu, "A 5.7 GHz interpolative VCO using InGaP/GaAs HBT Technology", in  IEEE Microwave and Wireless Components Letters, Vol. 12 No. 2, pp. 37-38, Feb. 2002
    • M. C. Chiang, S. S. Lu, C. Meng, S. A. Yu, S. C. Yang, and Y. J. Chan, "Analysis, design, and optimization of InGaP/GaAs HBT matched-impedance wide-band amplifiers with multiple feedback loops", IEEE Journal of Solid-State Circuits, Vol. 37 No.6, pp.694-701. NSC 90-2219-E005-001
    • C. Meng and G. H. Huang, "GaAs MESFET RF I-V curve through unique determination of small signal circuit parameters from measured S parameters", pp.426-427, Microwave and optical technology letters, NSC 90-2213-E-005-001. 
    • C. Meng, T.H. Wu, and G.W. Huang, "DC-12 GHz 10dB Gain Shunt-Series Shunt-Shunt Wideband Amplifiers by Commercially Available 0.35um SiGe HBT Technology", Microwave and optical technology letters, 2004
    • C. Y. Wang, S. S. Lu, C. Meng and Y. S. Lin, "A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications", microwave and optical technology letters, Vol. 43, No. 1, pp.87-.89 (EI), 2004
    • C. Meng, J. Y. Su and S. M. Yang, "Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations", J. Journal of Applied Physics, Vol. 44, No. 9A, pp. 6389-6394. (EI) NSC 93-2219-E-009-026, 2005年09月, Feb. 2006
    • Ming-Chou Chiang, Ping-Yu Chen, Shey-Shi Lu, and C. Meng, "DC-2.1 GHz CMOS Multiple Feedback Transimpedance Amplifiers With High Dynamic Range and Linearity", vol. 36, no. 1 pp.60-61, Microwave and optical technology letters, (EI) NSC90-2219-E-005-001.
    • C. Meng and M.H. Chiang, and T.H. Wu, "A 1.2-V Fully Integrated 2.4-GHz Low-Noise Amplifier in 0.35-um CMOS Technology,", vol. 36, no. 2 pp. 136-139, Microwave and optical technology letters, (EI) NSC90-2213-E-005-001.
    • C. Meng, S. S. Lu, M. H. Chiang, and H. C. Chen, "DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology", Electronics Letters, pp.637-638. NSC 91-2219-E-009-050
    • C. Meng, "Edge Instability Elimination of GaAs/AlGaAs MQW Avalanche Transit Time Oscillators by P+ Substrate", Microwave and optical technology letters, 2004
    • C. Meng, M. Q. Lin and G. W. Huang, "A fully integrated 5.2 GHz single-ended-in and single-ended-out 0.18 um CMOS Gilbert upconverter", Microwave and optical technology letters, Vol. 43, No. 3, pp.240-242. (EI) NSC 92-2219-E-009-023, 2004
    • C. Y. Wang, S. S. Lu, C. Meng, and Y. S. Lin, "A SiGe micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications", Microwave and optical technology letters, Vol. 41, No. 5, pp. 343-346. (EI)
    • C. Meng, D. W. Sung, and G. W. Huang, "A 5.2 GHz GaInP/GaAs HBT double quadrature downconverter with polyphase filters for 40 dB image rejection", IEEE Microwave and Wireless Components Letters, vol. 15, no. 2, pp. 59-61. (EI) NSC 93-2219-E-009-026
    • C. Meng, Shenkai Hsu, T. H. Wu and G. W. Huang, "A 0.18 m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements", Microwave and optical technology letters, Vol. 45, No. 2, pp. 168-170. (EI) NSC 93-2219-E-009-026
    • C. Meng, S. K. Hsu, and G. W. Huang, "A monolithic 5.2 GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator", Microwave and optical technology letters, Vol. 45, No. 4, pp.277-279. (EI) NSC 93-2219-E-009-026
    • C. Meng, Tzung-Han Wu and Ming-Chi Lin, "Compact 5.2-GHz GaInP/GaAs HBT Gilbert Upconverter using lumped rat-race hybrid and current combiner", IEEE Microwave and Wireless Components Letters, vol.15, no. 10, pp. 688-699 (EI) NSC 93-2219-E-009-026

  • 會議論文
    • S. C. Tseng, C. C. Meng, and G. W. Huang, June 2007, “High Gain CMOS Gilbert Downconverter With Wide-Swing Cascode Current-Mirror Transconductor and Load”, 2007 IEEE AP-S, pp. 4513-4516, NSC 95-2221-E-009-043-MY3
    • S. C. Tseng, C. C. Meng, C. H. Chang, and G. W. Huang, June 2007, “SiGe HBT Gilbert Downconverter With an Integrated Miniaturized Marchand Balun for UWB Applications”, 2007 IEEE MTT-S International Microwave Symposium, pp. 2141-2144.NSC 95-2221-E-009-043-MY3
    • S. C. Tseng, C. C. Meng, C. K. Wu, and G. W. Huang, June 2007, “Low-Voltage GaInP/GaAs HBT Wideband Gilbert Downconverter Using Transformer RF Balun ”, 2007 IEEE MTT-S International Microwave Symposium, pp. 2149-2152, NSC 95-2221-E-009-043-MY3
    • T. H. Wu, C. C. Meng, and G. W. Huang, June 2007, “Inductorless Broadband RF Front-End Using 2 um GaInP/GaAs HBT Technology”, 2007 IEEE MTT-S International Microwave Symposium, pp. 2137-2140. NSC 95-2221-E-009-043-MY3
    • H. J. Wei, C. C. Meng, Y. W. Chang, and G. W. Huang, June 2007, “Broadband GaInP/GaAs HBT Regenerative Frequency Divider with Active Loads ”, 2007 IEEE MTT-S International Microwave Symposium, pp. 2181-2184, NSC 95-2221-E-009-043-MY3
    • T. H. Wu, Y. C. Lin, C. C. Meng, T. H. Wu, H. J. Wei, and G. W. Huang, Dec 2007, “Compact GaInP/GaAs HBT Gilbert Mixers With On-Chip Active LO Balun ”, 2007 Asia Pacific Microwave conference, pp. 1069-1072.NSC 95-2221-E-009-043-MY3.
    • C. C. Meng, Y. H. Teng, Y. C. Lin, J. C. Jhong and Y. C. Yen, Dec 2007, “Characteristics of Integrated RF Transformers on GaAs Substrate”, 2007 Asia Pacific Microwave conference ,pp. 2519-2522.NSC
    • H. J. Wei, C. C. Meng, Y. W. Chang, Y. C. Lin, and G. W. Huang, Dec 2007, “A High-Speed HBT Prescaler Based on the Divide-by-Two Topology”,2007 Asia Pacific Microwave conference, pp. 2515-2518.NSC 95-2221-E-009-043-MY3.
    • J. S. Syu, C. C. Meng, C. K. Wu, and G. W. Huang, Dec 2007, “A wideband SiGe HBT Gilbert micromixer with differential-to-single CE-CC output stage”, 2007 Asia Pacific Microwave conference, pp. 2523-2526 .NSC 95-2221-E-009-043-MY3.
    • Chinchun Meng and Sheng-Che Tseng, April 2008, “Integrating Passive Components With Active Circuits Using Standard Silicon Process for Millimeter-Wave Applications”, invited paper, Global Symposium on Millimeter Waves, pp. 333-336.(SCI) NSC 95-2221-E-009-043-MY3
    • Jin-Siang Syu, Chinchun Meng, and Guo-Wei Huang, May 2008, “Bias-Offset NMOS/PMOS Cross-Coupled Pair for High Linearity Gilbert Upconversion Mixer”, International SiGe Technology and Device Meeting, pp. 108-111 (SCI) NSC 95-2221-E-009-043-MY3
    • Chinchun Meng, Jin-Siang Syu, Sheng-Che Tseng, Yu-Wen Chang, and Guo-Wei Huang, June 2008, “Low-Phase-Noise SiGe HBT VCOs Using Trifilar-Transformer Feedback”, IEEE MTT-S International Microwave Symposium, pp.249-251. (SCI) NSC 95-2221-E-009-043-MY3
    • J.-Y. Su, C. C. Meng, P.-Y. Wu and G. -W. Huang, Dec. 2008, “40-GHz CMOS subharmonic Gilbert mixer with quadrature injection-locked frequency divider,” Asia Pacific Microwave Conference. (SCI) NSC 95-2221-E-009-043-MY3
    • J.-S. Syu, C. C. Meng, Y. –C. Yen and G. –W. Huang, Dec. 2008, “Dual-band upconversion Gilbert mixer utilizing an LC current mirror,” in Asia Pacific Microwave Conference. (SCI) NSC 95-2221-E-009-043-MY3
    • J.-S. Syu, C. C. Meng and G. –W. Huang, Dec. 2008, “Trifilar-coupling QVCO using 0.35-μm SiGe HBT technology,” in Asia Pacific Microwave Conference. (SCI) NSC 95-2221-E-009-043-MY3
    • H. J. Wei, C. C. Meng, Y. C. Lin, and G. W. Huang, Dec. 2008, “A 9-GHz Dual-Modulus 0.18um CMOS Prescaler Using HLO-FF Technique,” Asia Pacific Microwave Conference, (SCI) NSC 95-2221-E-009-043-MY3
    • C. C. Meng and Sheng-Che Tseng, January 2009, “Gilbert Mixers With Microwave Quadrature/Differential Generators: An Approach for Millimeter-Wave IC,” invited paper, IEEE Radio and Wireless Symposium, (SCI) NSC 95-2221-E-009-043-MY3
    • Jin-Siang Syu, Chinchun Meng, Sheng-Wen Yu, Tzung-Han Wu, and Guo-Wei Huang, June 2009, “2.4/5.7-GHz Dual-Band Dual-Conversion Architecture With Correlated LO Signal Generators”, IEEE MTT-S International Microwave Symposium, pp.1517-1520. (SCI) NSC 95-2221-E-009-043-MY3
    • Hung-Ju Wei, Chinchun Meng, and Sheng-Wen Yu, June 2009, “Broadband CMOS Gilbert Down-Converter Utilizing a Low-Loss Step-Impedance Rat-Race Coupler”, IEEE MTT-S International Microwave Symposium, pp.1101-1104. (SCI) NSC 95-2221-E-009-043-MY3
    • J.-S. Syu, T.-H. Wu, and C. C. Meng, Aug. 2009, "Shunt-series shunt-shunt dual-feedback CMOS wideband Amplifier," in Progress in Electromagnetics Research Symposium (PIERS), pp. 506. (SCI) NSC 98-2221-E-009-033-MY3
    • J.-S. Syu, T.-H. Wu, C. C. Meng, and G.-W. Huang, Dec. 2009, “Kukielka and Meyer wideband dual feedback amplifiers using GaInP/GaAs HBT technology,” Asia Pacific Microwave Conference. (SCI) NSC 98-2221-E-009-033-MY3
    • J.-S. Syu, C. C. Meng, Y.-H. Teng, and G.-W. Huang, Dec. 2009, “X-band Weaver-Hartley low-IF downconverter with a resonant LC load,” Asia Pacific Microwave Conference. (SCI) NSC 98-2221-E-009-033-MY3
    • S.-C. Tseng, J.-S. Syu, J.-Y. Su, H.-J. Wei, C. C. Meng, and G.-W. Huang, Dec. 2009, “16.4 GHz SiGe BiCMOS sub-harmonic mixer with reactive I/Q generators in RF and LO paths,” Asia Pacific Microwave Conference. (SCI) NSC 98-2221-E-009-033-MY3
    • H.-J. Wei, C.-C. Meng, K. -C. Tsung, and G.-W. Huang, Dec. 2009, “12~18 GHz Resistive Mixer with a Miniature Marchand Balun using Standard CMOS Process,” Asia Pacific Microwave Conference. (SCI) NSC 98-2221-E-009-033-MY3
    • S.-C. Tseng, H.-J. Wei, J.-Y. Su, C. -C. Meng, K. -C. Tsung, and G. -W. Huang, Dec. 2009, “True 50% Duty-Cycle High-Speed Divider with the Modulus of Odd Numbers,” Asia Pacific Microwave Conference. (SCI) NSC 98-2221-E-009-033-MY3
    • S. C. Tseng, C. Meng, S. Y. Li, J. Y. Su and G. W. Huang, "2.4 GHz Divide-by-256~271 Single-Ended Frequency Divider in Standard 0.35-μm CMOS Technology", 2005 Asia Pacific Microwave Conference, pp. 856-859.
    • J. Y. Su, C. Meng, Y. H. Li, S. C. Tseng and G. W. Huang, "2.4 GHz 0.35 um CMOS Single-Ended LNA and Mixer with Gain Enhancement Techniques", 2005 Asia Pacific Microwave Conference, pp. 1550-1553., 2005
    • C. Meng, J. Y. Su, B. C. Tsou and G. W. Huang, "RF Characteristics of BJT Devices with Selectively or Fully Ion-Implanted Collector", European gallium arsenide and other semiconductors application symposium (GAAS 2005), pp. 161-164., 2005
    • S. C. Tseng, C. Meng, W. Y. Chen and J. Y. Su, "A Physics-Based Transit Time Model for GaInP/GaAs HBT Devices", 2005 Asia Pacific Microwave Conference, pp. 1031-1034., 2005
    • C. Meng, T. H. Wu, M. C. Lin, "High Performance GaInP/GaAs HBT Radio Frequency Integrated Circuits at 5 GHz", 2005 Asia Pacific Microwave Conference, invited paper, pp. 823-826, 2005
    • C. Meng, S. C. Tseng, Y. W. Chang, J. Y. Su and G. W. Huang, "4-GHz Low-Phase-Noise Transformer-Based Top-Series GaInP/GaAs HBT QVCO", 2006 IEEE MTT-S International Microwave Symposium, pp. 1809-1812, 2006
    • T. H. Wu, C. Meng, and G. W. Huang, "A High 2LO-to-RF Isolation GaInP/GaAs HBT Sub-Harmonic Gilbert Mixer Using Three-Level Topology", 2006 IEEE MTT-S International Microwave Symposium, pp. 1505-1508, 2006
    • S. C. Tseng, C. Meng, C. H. Chang, C. K. Wu and G. W. Huang, "Broadband Gilbert Micromixer With an LO Marchand Balun and a TIA Output Buffer", 2006 IEEE MTT-S international microwave symposium, pp. 1509-1512, 2006
    • C. Meng, T. H. Wu and T. H. Wu, "5.2-GHz GaInP/GaAs HBT Gilbert Downconversion Micromixer With the Integrated Lumped Rat-Race Hybrid", cross strait tri-regional radio science & wireless technology conference 2006, pp. 440-441, 2006
    • C. Meng, "Comparisons of Complex Permittivity Measurements Using Free-Space and Waveguide Fabry-Perot Resonators at E/W-band Frequencies", Joint international conference on infrared and millimeter waves and international conference on Terahertz electronics, pp. 443, 2006
    • S. C. Tseng, C. Meng, Y. W. Chang and G. W. Huang, "4-GHz Fully Monolithic SiGe HBT QVCO Using Superharmonic Coupling Topology", European microwave integrated circuits conference 2006
    • T. H. Wu and C. Meng, "A High 2LO-RF Isolation SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using Stacked-LO-Stage Topology", IEEE Tenco 2006
    • S. C. Tseng and C. Meng, "10-GHz 0.35-um SiGe BiCMOS Bottom-LO-Sub-Harmonic Gilbert Mixer With Lumped-Element Rat-Races", 2006 Asia Pacific Microwave Conference, 2006
    • Y. W. Hsu. S. S. Lu. C. Meng, and L. P. Chen, "The Power Performance of Ga0.51In0.49P/In0.15Ga0.85As Doped-Channel FET`s", the fifth symposium on nano device technology, pp. 39-41 ., 1998
    • C. Meng, Ghi-Hong Huang, "Unique Determination of the Equivalent Circuit Parameters for Uniform-doped GaAs MESFET", the fifth symposium on nano device technology, pp. 33-38 ., 1998
    • C. Meng, S. M. Yang, J. W. Chen, G. H. Huang, "Small Signal Circuit Parameters for Unifrom-doped MESFETs", International electron devices and materials symposia, BP-14 p191-194. NSC-88-2219-E-005-013., 1998
    • C. Meng, and G. R. Liao, "Characterization of GaInP avalanche transit time device in millimeter-wave frequencies", 1998 IEEE MTT-S International Microwave Symposium, pp. 1715-1718, NSC-87-2213-E-005-019, 1998
    • C. Meng, G. R. Liao, and J. W. Chen, "Theoretical analysis of Wurtzite and Zincblende phase GaN avalanche transit time device in millimeter-wave frequencies", 1999 IEEE MTT-S International Microwave Symposium, pp. 1777-1780, NSC 88-2213-E-005-014, 1999
    • C. Meng, J. W. Chen, S. M. Yang, C. H. Chang, L. P. Chen, H. Y. Lee and J. F. Kuan, "Bias dependent gain compression mechanisms in power MESFETS", 1999 international symposium on communications, pp. 378-381, NSC 89-2213-E-005-019, 1999
    • C. Meng, and G. Z. Liao, "Power generation of millimeter-wave SiC avalanche transit time oscillator at high temperature", 1997 IEEE MTT-S International Microwave Symposium, pp. 963-966. NSC-86-2221-E-005- 012, 1997
    • C. Meng, "1.9 GHz two stage power MMIC amplifier", 1996 national symposium on telecommunications, pp. 281-288., 1996
    • C. Meng, S. M. Yang, J. W. Chen and C. H. Chang, "Analysis of GaAs MESFET circuit parameters by 2-D simulation", 1999 International electron devices and materials symposia, pp.191-194, NSC 88-2219-E-005-004, 1999
    • C. Meng, S. M. Yang, J. W. Chen and C. H. Chang, "Gain Compression mechanisms in wide recess and narrow recess FETs", 1999 International electron devices and materials symposia, pp. 395-398, NSC 89-2213-E-005-019, 1999
    • C. Meng, Y. Wang, "optimal design of p buffer layer for GaAs power MESFET", International electron devices and materials symposia, B2-3, p65-p68., 1996
    • C. Meng and H. Y. Ni, "Stability factors for conditionally stable amplifiers", symposium on nano device technology 2000, pp. 237-240 , 2000
    • Y. S. Lin, Y. Wang, S.S. Lu, and C. Meng, "Fabrication and simulation of high power high speed GaInP/GaAs airbridge gate MISFET's grown by GSMBE", 1996 IEEE GaAs IC Symposium, pp. 233-236. NSC 85-2221-E-002-025, 1996
    • C. Meng, J. W. Chen, J. H. Chang, L. P. Chen, H. Y. Lee and J. F. Kuan, "Using average RF gate and drain current to determine gain compression mechanism for narrow-recessed and wide-recessed MESFETs", European gallium arsenide and other semiconductors application symposium (GAAS 2000), p338-341. NSC 89-2213-E-005-019, 2000
    • C. Meng and S. J. Liu, "Ion-implanted planar gate GaAs power MESFET", 2000 International electron devices and materials symposia, pp.167-170, NSC 89-2213-E-005-053.
    • C. Meng, "GaAs and AlGaAs physics parameters extraction from the measured impact ionization rates: the lucky drift model approach", 1996 annual meeting of the Chinese physical society. 
    • C. Meng, H. Y. Ni and A. S. Pon, "New criterion for linear 2-port network stability”, 2000 National symposium on telecommunications", pp. 2.12-2.16. NSC 89-2219-E-005-004.
    • H. C. Chen, C. Meng, S. S. Lu, M. H. Chiang, "CMOS mixer with Gilbert cell variant topology", 2000 National symposium on telecommunications”, pp. 2.12-2.16. NSC 89-2213-E-005-019.
    • C. Meng, "Millimeter-wave AlGaAs avalanche transit time oscillators", the 20th international conference on infrared and millimeter wave, pp. 72-73. 
    • K. L. Deng, C. Meng, S. S. Lu, H. D. Lee and H. Wang, "A fully monolithic integrated twin dipole antenna mixer on a GaAs substrate", 2000 Asia Pacific Microwave conference, pp54-57. NSC 89-2213-E-005-019.
    • C. Meng and H. Ni, "Determining stability circle using two geometrically derived parameters", 2000 Asia Pacific Microwave conference, pp.1101-1104. NSC 89-2219-E-005-004.
    • J. Shu, J. Wei, R. Basset, Y. Chung, C. Hua, C. Meng, P. Chye, J.Hall and D. Day, "C-Band high performance IMFETS and SUPERIMFETS using MESFET and PHEMT technology for SATCOM applications", IEEE MTT-S, pp. 561-564.
    • H. Y. Tu, H. Y. Pan, C. Meng, S. S. Lu, G. W. Huang, T. H. Chou and C. K. Peng, "Single-voltage-supply InGaP/AlGaAs/InGaAs HEMT’s for power application", symposium on nano device technology 2001, pp.90-93 ., NSC 89-2219-E-005-004
    • C. Meng, S.W. Siao, H. R. Fetterman, D. C. Streit, T. R. Block and Y. Saito, "GaAs/AlGaAs multiquantum well IMPATT devices: substrate selection and its effect on the device stability", Asian Pacific microwave conference, p6-6 to p6-12
    • H. Y. Tu, H. Y. Pan, G. R. Liao, C. Meng, S. S. Lu, G. W. Huang, T. H. Chou and C. K. Peng, "The fabrication of submicron T gate by photoresist flowing technique", symposium on nano device technology 2001, pp.189-191 ., NSC 89-2219-E-005-004
    • H. Y. Pan, H. Y. Tu, S. S. Lu, C. Meng, G. W. Huang, T. H. Chou and C. K. Peng, "Unified AlGaAs/InGaAs HFET model", symposium on nano device technology 2001, pp. 260-263 ., NSC 89-2219-E-005-004
    • C. Meng, H. R. Fetterman, D. C. Streit, T. R. Block, and Y. Saito, "GaAs/AlGaAs multiquntum well structures applied to high frequency IMPATT devices", IEEE MTT-S International Microwave Symposium, pp. 539-542 
    • H. Y. Pan, H. Y. Tu, S. S. Lu, C. Meng, G. W. Huang, T. H. Chou, C. K. Peng, "Extracting small signal model parameters of InGaP/InGaAs HEMT", symposium on nano device technology 2001, pp. 244-247 ., NSC 89-2219-E-005-004
    • C. Meng, S. W. Siao, H. R. Fetterman, D. C. Streit, T. R. Block and Y. Saito, "Novel 100 GHz GaAs/AlGaAs MQW IMPATT oscillators: p+n single drift structure on p+ substrates", fourth international symposium on space terahertz technology, pp. 353-361
    • C. Meng, H. R. Fetterman, D. Streit, T. Block and Y. Saito, "Characterization of 100 GHz GaAs/AlGaAs multiquantum well avalanche transit times devices", the 17th international conference on infrared and millimeter wave, pp. 95-96
    • C. Meng, S. W. Siao, H. R. Fetterman, "Multiquantum well IMPATT devices in W-band frequencies", international semiconductor device research syposium, pp. 79-82
    • C. Meng, C. H. Chang, A. S. Pong, J. F. Kuan and G. W. Huang, "Loadline determination of power MESFET by using gate and drain currents at P1dB", symposium on nano device technology 2001, pp. 244-247 ., NSC 89-2213-E-005-053
    • C. Meng, S. S. Lu, H. C. Chen, M. H. Chiang, J. F. Kuan, D. C. Lin and G. W. Huang, "C band GaInP/GaAs HBT mixer with Gilbert cell variant topology", symposium on nano device technology 2001, pp. 83-85 ., NSC 89-2219-E-005-004
    • C. Meng, S. S. Lu, H. C. Chen, M. H. Chiang, J. F. Kuan,D. C. Lin and G. W. Huang, "DC-8 GHz 11 dB gain GaInP/GaAs HBT double balanced Gilbert micromixe", European gallium arsenide and other semiconductors application symposium (GAAS 2001), pp.81-84. NSC 90-2213-E-005-003
    • S. S. Lu, M. C. Chiang and C. Meng, "Analysis and design of CMOS match-impedance wide-band amplifiers", Asia Pacific Microwave conference, pp. 288-290. NSC 89-2213-E-005-019. 
    • C. Meng and G. H. Huang, "High frequency I-V curves for GaAs MESFETs through unique determination of small signal circuit parameters at multiple bias points", Asia Pacific Microwave conference, pp.709-711. NSC 89-2213-E-005-053.
    • C. Meng and H. Y. Ni, "Gain profiles for conditionally stable and unconditionally stable amplifiers", Asia Pacific Microwave conference, pp.33-36. NSC 89-2213-E-005-053. 
    • C. Meng, C. H. Chang, J. F. Kuan, and G. W. Huang, "Direct observation of loadlines in MESFET by using average rf gate and darin currents", 2002 IEEE MTT-S International Microwave Symposium. NSC 90-2219-E-005-001
    • C. Y. Wang, S. S. Lu and C. Meng, "Wideband impedance matched GaInP/GaAs HBT Gilbert micromixer with 12 dB gain", pp. 323-326, 2002 Asia Pacific ASIC.
    • C. Meng, Tzung-Han Wu and Shey-Shi Lu, "28dB Gain DC-6GHz GaInP/GaAs HBT Wideband Amplifiers with and without Emitter Capacitive Peaking", European gallium arsenide and other semiconductors application symposium (GAAS 2002), NSC 90-2213-E-005-001
    • C. Meng, A. S. Peng, S. Y. Wen and G. W. Huang, "Direct Observation of Gain Compression Mechanisms in PHEMT by RF Gate and Drain Currents", European gallium arsenide and other semiconductors application symposium (GAAS 2002), NSC 90-2219-E-005-001
    • C. Y. Wang, H. W. Chiu, H.C. Chen, S. S. Lu, and C. Meng, "A Low Power SiGe Micromixer for 2.4/5.2/5.7 GHz Multi-band WLAN ApplicationsA Low Power SiGe Micromixer for 2.4/5.2/5.7 GHz Multi-band WLAN Applications", pp. 910-911 Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, Tokyo, 2003
    • C. Meng, S.K. Hsu, M.H. Chao, and G.W. Huang, "A high isolation CMFB downconversion micromixer using 0.18um deep n-well CMOS technology", accepted to be presented in 2003 IEEE Radio Frequency Integrated Circuits Symposium. (EI) NSC 91-2219-E-009-051
    • C. Meng, S. K. Hsu, T. H. Wu, M. H. Chao and G. W. Huang, "A high isolation CMFB downconversion micromixer using 0.18 mm deep n-well CMOS technology", 2003 IEEE Radio Frequency Integrated Circuits Symposium. Pp. 619-622 (EI) NSC 91-2219-E-009-050
    • C. Meng, S. K. Hsu, A. S. Peng, S. Y. Wen and G. W. Huang, "A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator", 2003 IEEE Radio Frequency Integrated Circuits Symposium. pp. 719-722 (EI) NSC 91-2219-E-009-051 
    • C. Meng, and S.M. Yang, "On The Dependence Between High Frequency Circuit Parameters And Device Parameters For GaAs MESFET", 2003 Asia Pacific Microwave Conference. pp.338~341(EI) NSC 92-2219-E-005-001 
    • C. Meng, T. H. Wu, and G. W. Huang, "Dual-Feedback DC-12 GHz Wideband Amplifiers Using Commercially Available SiGe HBT Technology", 2003 Asia Pacific Microwave Conference. pp.405~408 (EI) NSC 92-2219-E-009-023
    • C. Meng, T. H. Wu, T. H. Wu and G. W. Huang, "A high gain 0.35 m SiGe BiCMOS micromixer using active differential loads", 2004 symposium on nano device technology, pp.332-333. NSC 92-2219-E-009-023
    • C. Meng, and T. H. Wu, T. H. Wu, and G. W. Huang, "A 5.2 GHz 16 dB gain CMFB Gilbert downconversion mixer using 0.35 um deep trench isolation SiGe BiCMOS technology", 2004 IEEE MTT-S International Microwave Symposium, pp.975-978. (EI) NSC 92-2219-E-009-023
    • C. Meng, T. H. Wu, T. H. Wu, and G. W. Huang, "Fully integrated 5.2 GHz double quadrature image rejection Gilbert downconverter using 0.35 m SiGe technology", European Gallium Arsenide and Other Semiconductors Application Symposium (GAAS 2004), pp. 319-322. (EI) NSC 93-2219-E-009-026
    • T. H. Wu, C. Meng, T. H. Wu, G. W. Huang, "A 5.7 GHz 0.35 m SiGe HBT upconversion micromixer with a matched single-ended passive current combiner output", European gallium arsenide and other semiconductors application symposium (GAAS 2004), pp. 323-326. (EI) NSC 93-2219-E-009-026
    • C. Meng and B. C. Tsou, "GaInP/GaAs HBT device structure determination by DC measurements on a two-emitter HBT device and high frequency measurements", 2004 Asia Pacific Microwave Conference. (EI) NSC 92-2219-E-009-023
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  • 專  利
    • high efficiency, high power multiquantum well IMPATT device with optical injection locking, 美國, 5466965, 孟慶宗